The ISL6140 is an 8-pin, negative voltage hot plug controller
that allows a board to be safely inserted and removed from a
live backplane. Inrush current is limited to a programmable
value by controlling the gate voltage of an external
N-channel pass transistor. The pass transistor is turned off if
the input voltage is less than the undervoltage threshold, or
greater than the overvoltage threshold. A programmable
electronic circuit breaker protects the system against shorts.
The active low PWRGD
signal can be used to directly enable
a power module (with a low enable input)
The ISL6150 is the same part, but with an active high
PWRGD signal.
Ordering Information
TEMP.
PART NUMBER
ISL6140CB0 to 708 Ld SOICM8.15
ISL6140CBZ
(Note 1)
ISL6140IB-40 to 858 Lead SOICM8.15
ISL6140IBZ
(Note 1)
ISL6150CB0 to 708 Ld SOICM8.15
ISL6150CBZ
(Note 1)
ISL6150IB-40 to 858 Lead SOICM8.15
ISL6150IBZ
(Note 1)
NOTES:
1. Intersil Lead-Free products employ special lead-free material sets;
molding compounds/die attach materials and 100% matte tin plate
termination finish, which is compatible with both SnPb and leadfree soldering operations. Intersil Lead-Free products are MSL
classified at lead-free peak reflow temperatures that meet or
exceed the lead-free requirements of IPC/JEDEC J Std-020B.
2. Add suffix “-T” to Part Number for Tape and Reel.
RANGE (°C)PACKAGE
0 to 708 Ld SOIC
(Lead-Free)
-40 to 858 Lead SOIC
(Lead-Free)
0 to 708 Ld SOIC
(Lead-Free)
-40 to 858 Lead SOIC
(Lead-Free)
PKG.
DWG. #
M8.15
M8.15
M8.15
M8.15
Pinout
ISL6140 OR ISL6150 (8 LEAD SOIC)
TOP VIEW
PWRGD
1
OV
2
3
UV
V
4
EE
ISL6140 has active Low (L version) PWRGD output pin
ISL6150 has active High (H version) PWRGD output pin
8
7
6
5
V
DD
DRAIN
GATE
SENSE
FN9039.2
Features
• Low Side External NFET Switch
• Operates from -10V to -80V (-100V absolute max rating)
or +10V to +80V (+100V absolute max rating)
PWRGD (ISL6140; L Version) Pin 1 - This digital output is
an open-drain pull-down device. The Power Good
comparator looks at the DRAIN pin voltage compared to the
internal VPG reference (VPG is nominal 1.7V); this
essentially measures the voltage drop across the external
FET and sense resistor. If the voltage drop is small (<1.7V is
normal), the PWRGD
used as an active low enable for an external module. If the
voltage drop is too large (>1.7V indicates some kind of short
or overload condition), the pull-down device shuts off, and
the pin becomes high impedance. Typically, an external pullup of some kind is used to pull the pin high (many brick
regulators have a pull-up function built in).
PWRGD (ISL6150; H Version) Pin 1 - This digital output is
a variation of an open-drain pull-down device. The Power
Good comparator is the same as described above, but the
polarity of the output is reversed, as follows:
If the voltage drop across the FET is too large (>1.7V), the
open drain pull-down device will turn on, and sink current to
the DRAIN pin. If the voltage drop is small (<1.7V), a 2nd
pull-down device in series with a 6.2K resistor (nominal)
sinks current to VEE; if the external pull-up current is low
enough (<1mA, for example), the voltage drop across the
resistor will be big enough to look like a logic high signal (in
this example, 1mA * 6.2kΩ = 6.2V). This pin can thus be
used as an active High enable signal for an external module.
Note that for both versions, although this is a digital pin
functionally, the logic high level is determined by the external
pull-up device, and the power supply to which it is
connected; the IC will not clamp it below the VDD voltage.
Therefore, if the external device does not have its own
clamp, or if it would be damaged by a high voltage, then an
external clamp might be necessary.
OV (Over-Voltage) Pin 2 - This analog input compares the
voltage on the pin to an internal voltage reference (nominal
1.223V). When the input goes above the reference (low to
high transition), that signifies an OV (Over-Voltage)
condition, and the GATE pin is immediately pulled low to
shut off the external FET. Since there is 20mV of nominal
hysteresis built in, the GATE will remain off until the OV pin
drops below a 1.203V (nominal) high to low threshold. A
typical application will use an external resistor divider from
VDD to VEE, to set the OV level as desired; a three-resistor
divider can set both OV and UV.
UV (Under-Voltage) Pin 3 - This analog input compares the
voltage on the pin to an internal voltage reference (nominal
1.223V). When the input goes below the reference (high to
low transition), that signifies an UV (Under-Voltage)
condition, and the GATE pin is immediately pulled low to
shut off the external FET. Since there is 20mV of nominal
hysteresis built in, the GATE will remain off until the UV pin
pin pulls low (to VEE); this can be
rises above a 1.243V (nominal) low to high threshold. A
typical application will use an external resistor divider from
VDD to VEE, to set the UV level as desired; a three-resistor
divider can set both OV and UV.
If there is an Over-Current condition, the GATE pin is latched
off, and the UV pin is then used to reset the Over-Current
latch; the pin must be externally pulled below its trip point,
and brought back up (toggled) in order to turn the GATE
back on (assuming the fault condition has disappeared).
VEE Pin 4 - This is the most Negative Supply Voltage, such
as in a -48V system. Most of the other signals are
referenced relative to this pin, even though it may be far
away from what is considered a GND reference.
SENSE Pin 5 - This analog input measures the voltage drop
across an external sense resistor (between SENSE and
VEE), to determine if the current exceeds an Over-Current
trip point, equal to nominal (50mV / Rsense). Noise spikes of
less than 2µs are filtered out; if longer spikes need to be
filtered, an additional RC time constant can be added to
stretch the time (See Figure 29; note that the FET must be
able to handle the high currents for the additional time). To
disable the Over-Current function, connect the SENSE pin
to VEE.
GATE Pin 6 - This analog output drives the gate of the
external FET used as a pass transistor. The GATE pin is
high (FET is on) when UV pin is high (above its trip point);
the OV pin is low (below its trip point), and there is no OverCurrent condition (VSENSE - VEE <50mV). If any of the 3
conditions are violated, the GATE pin will be pulled low, to
shut off the FET.
The Gate is driven high by a weak (-45µA nominal) pull-up
current source, in order to slowly turn on the FET. It is driven
low by a strong (32mA nominal) pull-down device, in order to
shut off the FET very quickly in the event of an Over-Current
or shorted condition.
DRAIN Pin 7 - This analog input compares the voltage of
the external FET DRAIN to the internal VPG reference
(nominal 1.7V), for the Power Good function.
Note that the Power Good comparator does NOT turn off the
GATE pin. However, whenever the GATE is turned off (by
OV, UV or SENSE), the Power Good Comparator will usually
then switch to the power-NOT-good state, since an off FET
will have the supply voltage across it.
VDD Pin 8 - This is the most positive Power Supply pin. It
can range from +10 to +80V (Relative to VEE). If operation
down near 10V is expected, the user should carefully
choose a FET to match up with the reduced GATE voltage
shown in the spec table.
2
ISL6140, ISL6150
www.BDTIC.com/Intersil
.
Absolute Maximum RatingsThermal Information
Supply Voltage (VDD to VEE) . . . . . . . . . . . . . . . . . . . -0.3V to 100V
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
Operating Conditions
Temperature Range (Industrial) . . . . . . . . . . . . . . . . . .-40°C to 85°C
Temperature Range (Commercial). . . . . . . . . . . . . . . . . 0°C to 70°C
Supply Voltage Range (Typical). . . . . . . . . . . . . . . . . . . 36V to 72V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. θ
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
JA
4. Typical value depends on VDD voltage; see Figure 13, “VGATE vs VDD” (<20V).
5. PWRGD is referenced to DRAIN; V
PWRGD-VDRAIN
= 0V.
Electrical Specifications VDD = +48V, VEE = +0V Unless Otherwise Specified. All tests are over the full temperature range; either
Commercial (0°C to 70°C) or Industrial (-40°C to 85°C). Typical specs are at 25°C.
(°C/W)
JA
PARAMETERSYMBOL
DC PARAMETRIC
Supply Operating RangeV
Supply CurrentI
GATE PIN
Gate Pin Pull-Up CurrentI
Gate Pin Pull-Down CurrentI
External Gate Drivedelta-
SENSE PIN
Circuit Breaker Trip VoltageV
SENSE Pin CurrentI
UV PIN
UV Pin High Threshold VoltageV
UV Pin Low Threshold VoltageV
UV Pin HysteresisV
UV Pin Input CurrentI
OV PIN
OV Pin High Threshold VoltageV
OV Pin Low Threshold VoltageV
OV Pin HysteresisV
OV Pin Input CurrentI
DD
DD
PU
PD
V
GATE
CB
SENSEVSENSE
UVH
UVL
UVHY
INUV
OVH
OVL
OVHY
INOV
TEST
LEVEL
TEST
CONDITIONS
UV = 3V; OV = VEE; SENSE = VEE;
= 80V
V
DD
Gate Drive on, V
Gate Drive off; any fault condition243270mA
(V
GATE - VEE)
(V
GATE - VEE)
VCB = (V
UV Low to High Transition1.2131.2431.272V
UV High to Low Transition1.1981.2231.247V
VUV = V
OV Low to High Transition1.1981.2231.247V
OV High to Low Transition1.1651.2031.232V
VOV = V
GATE = VEE
, 17V ≤ VDD ≤ 80V101415V
, 10V ≤ VDD ≤ 17V45.46.215V
- VEE)405060mV
SENSE
= 50mV-0-0.5µA
EE
EE
OR
NOTES
PART NUMBER
OR GRADE
UNITSMINTYPMAX
10-80V
0.60.91.3mA
-30-45-60µA
72050mV
--0.05-0.5µA
72050mV
--0.05-0.5µA
3
ISL6140, ISL6150
www.BDTIC.com/Intersil
Electrical Specifications VDD = +48V, VEE = +0V Unless Otherwise Specified. All tests are over the full temperature range; either
Commercial (0°C to 70°C) or Industrial (-40°C to 85°C). Typical specs are at 25°C. (Continued)
PARAMETERSYMBOL
DRAIN PIN
Power Good Threshold (L to H)V
Power Good Threshold (H to L)V
Power Good Threshold HysteresisV
Drain Input Bias CurrentI
ISL6140 (PWRGD
PWRGD
Output LeakageI
ISL6150 (PWRGD PIN: H VERSION)
PWRGD Output Low Voltage (PWRGD-DRAIN)V
PWRGD Output ImpedanceR
AC TIMING
OV High to GATE Low
OV Low to GATE High
UV Low to GATE Low
UV High to GATE High
SENSE High to GATE Low
ISL6140 (L VERSION)
DRAIN Low to PWRGD
DRAIN High to PWRGD
ISL6150 (H VERSION)
DRAIN Low to (PWRGD-DRAIN) High
DRAIN High to (PWRGD-DRAIN) Low
Output Low VoltageV
PIN: L VERSION)
Low
High
tPHLOV
tPLHOV
tPHLUV
tPLHUV
tPHLSENSE
tPHLPG
tPLHPG
tPHLPG
tPLHPG
PGLHVDRAIN
PGHLVDRAIN
PGHY
DRAINVDRAIN
OH
OUT
Transition
Transition
(V
OL
OL
DRAIN
I
= 1mA
OUT
= 3mA-0.881.20
I
OUT
= 5mA-1.451.95V
I
OUT
V
DRAIN
V
DRAIN
(V
DRAIN
(Figures 1, 3A)0.61.63.0µs
(Figures 1, 3A)1.07.812.0µs
(Figures 1, 3B)0.61.33.0µs
(Figures 1, 3B)1.08.412.0µs
(Figures 1, 2)234µs
(Figures 1, 4A)0.10.92.0µs
(Figures 1, 4A)0.10.72.0µs
(Figures 1, 4B)50.10.92.0µs
(Figures 1, 4B)50.10.82.0µs
TEST
TEST
CONDITIONS
- VEE, Low to High
- VEE, High to Low
= 48V103560µA
- V
< V
EE)
PG
= 48V, V
= 5V, I
- V
EE)
OUT
< V
= 80V-0.0510µA
PWRGD
= 1mA-0.801.0V
PG
LEVEL
OR
NOTES
PART NUMBER
OR GRADE
UNITSMINTYPMAX
1.551.701.87V
1.101.251.42V
0.300.450.60V
-0.280.50V
3.56.29.0kΩ
4
Test Circuit and Timing Diagrams
www.BDTIC.com/Intersil
R = 5K
5V
OV
V
UV
PWRGD
V
1
OV
2
ISL6140
UV
V
EE
ISL6150
3
4
FIGURE 1. TYPICAL TEST CIRCUITFIGURE 2. SENSE TO GATE TIMING
8
7
6
5
V
DD
DRAIN
GATE
SENSE
ISL6140, ISL6150
+
48V
-
V
DRAIN
V
SENSE
SENSE
GATE
50mV
t
PHLSENSE
1V
2V
0V
13V
GATE
0V
OV
1.223V1.203V
t
PHLOV
1V
FIGURE 3A. OV TO GATE TIMINGFIGURE 3B. UV TO GATE TIMING
DRAIN
PWRGD
1.8V
t
1.0V
PLHPG
FIGURE 4A. DRAIN TO PWRGD
2V
1.223V1.243V
t
PHLUV
1V
t
PLHUV
1V
t
PLHOV
1V
UV
0V
13V
GATE
0V
FIGURE 3. OV AND UV TO GATE TIMING
1.8V
1.0V
t
PLHPG
t
PHLPG
1.4V
1.0V
t
PHLPG
1.4V
DRAIN
PWRGD
1.0V
TIMING (ISL6140)FIGURE 4B. DRAIN TO PWRGD TIMING (ISL6150)
FIGURE 4. DRAIN TO PWRGD
/PWRGD TIMING
5
ISL6140/ISL6150 Block Diagram
www.BDTIC.com/Intersil
ISL6140, ISL6150
GND
R4
R5
R6
3 UV
2 OV
, V
V
UVL
(1.223V)
+
V
EE
EE
OVH
GND
8 V
DD
V
(INTERNAL
CC
-
+
VOLTAGE) AND
REFERENCE
GENERATOR
V
EE
C1
-
+
-
+
(50mV)
V
CB
+
V
EE
V
CC
VPG (1.7V)
V
UVL
VCB (50mV)
LOGIC AND
GATE DRIVE
R2
, V
OVH
C2R3
PWRGD/PWRGD
OUTPUT DRIVE
-
+
VPG (1.7V)
+
V
EE
7 DRAIN6 GATE5 SENSE4 V
1 PWRGD (6150)
1 PWRGD (6140)
CL
LOAD
RL
-48V IN
R1
Typical Values for a representative system; which
assumes:
36V to 72V supply range; 48 nominal; UV = 37V; OV = 71V
1A of typical current draw; 2.5 Amp Over-Current
100µF of load capacitance (CL); equivalent RL of 48Ω
(R = V/I = 48V/1A)
R1: 0.02Ω (1%)
R2: 10Ω (5%)
R3: 18kΩ (5%)
R4: 562kΩ (1%)
R5: 9.09kΩ (1%)
R6: 10kΩ (1%)
C1: 150nF (25V)
C2: 3.3nF (100V)
Q1: IRF530 (100V, 17A, 0.11Ω)
Q1
-48V OUT
Applications: Quick Guide to Choosing
Component Values
(See Block Diagram for reference)
This section will describe the minimum components needed
for a typical application, and will show how to select
component values. (Note that “typical” values may only be
good for this application; the user may have to select some
component values to match the system). Each block will
then have more detailed explanation of how it works, and
alternatives.
R4, R5, R6 - together set the Under-Voltage (UV) and OverVoltage (OV) trip points. When the power supply ramps up
and down, these trip points (and their 20mV nominal
hysteresis) will determine when the gate is allowed to turn on
and off (the UV and OV do not affect the PWRGD output).
The input power supply is divided down such that when each
pin is equal to the trip point (nominal is 1.223V), the
comparator will switch.
V
= 1.223 (R4 + R5 + R6)/(R5 + R6)
UV
V
= 1.223 (R4 + R5 + R6)/(R6)
OV
The values of R4 = 562K, R5 = 9.09K, and R6 = 10K will
give trip points of UV = 37V and OV = 71V.
6
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