intersil ISL2111 DATA SHEET

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ISL2110, ISL2111

Data Sheet April 25, 2008 FN6295.3

100V, 3A/4A Peak, High Frequency Half-Bridge Drivers

The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/ pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the V range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the V

operational supply

supply rail.

Ordering Information

PART

NUMBER

(Notes 1, 2)

ISL2110ABZ 2110 ABZ -40 to +125 8 Ld SOIC M8.15 ISL2110AR4Z 211 0AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A ISL2111ABZ 2111 ABZ -40 to +125 8 Ld SOIC M8.15 ISL2111AR4Z 211 1AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A ISL2111ARTZ 211 1ARTZ -40 to +125 10 Ld 4x4 TDFN L10.4x4

NOTES:

1. These Intersil Pb-free plastic packaged products employ special Pbfree material sets; molding compounds/die attach materials and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.

2. Add “-T” suffix for Tape and Reel p acking option. Please refer to TB347 for details on reel specifications.

PART

MARKING

TEMP.

RANGE (°C)

PACKAGE

(Pb-Free)

PKG.

DWG. #

Features

• Drives N-Channel MOSFET Half-Bridge

• SOIC, DFN and TDFN Package Options

• SOIC, DFN and TDFN Packages Compliant with 100V Conductor Spacing Guidelines per IPC-2221

• Pb-Free (RoHS Compliant)

• Bootstrap Supply Max Voltage to 114VDC

• On-Chip 1Ω Bootstrap Diode

• Fast Propagation Times for Multi-MHz Circuits

• Drives 1nF Load with Typical Rise/Fall Times of 9ns/7.5ns

• CMOS Compatible Input Thresholds (ISL2110)

• 3.3V/TTL Compatible Input Thresholds (ISL2111)

• Independent Inputs Provide Flexibility

• No Start-Up Problems

• Outputs Unaffected by Supply Glitches, HS Ringing Below Ground or HS Slewing at High dv/dt

• Low Power Consumption

• Wide Supply Voltage Range (8V to 14V)

• Supply Undervoltage Protection

•1.6Ω/1Ω Typical Output Pull-Up/Pull-Down Resistance

Applications

• Telecom Half-Bridge DC/DC Converters

• Telecom Full-Bridge DC/DC Converters

• Two-S wi tch Forward Converters

• Active-Clamp Forward Converters

• Class-D Audio Amplifiers

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

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| Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

Pinouts

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ISL2111

(10 LD 4X4 TDFN)

TOP VIEW

ISL2110, ISL2111

ISL2110, ISL2111 (12 LD 4X4 DFN)

TOP VIEW

VDD

3 4

HS NC

Application Block Diagram

VSS

8 7

HI NC

NC HB HO HS HI

EPAD*

4 5 6 7

*EPAD = Exposed PAD

12 11 10

9 8

LO V NC NC LI

ISL2110, ISL2111

(8 LD SOIC)

TOP VIEW

+12V

LO V

+100V

PWM

CONTROLLER

DRIVE

CONTROL

ISL2110 ISL2111

REFERENCE

ISOLATION

SECONDARY

CIRCUIT

AND

FN6295.3

April 25, 2008

Functional Block Diagram

www.BDTIC.com/Intersil

*EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For

best thermal performance connect the EPAD to the PCB power ground plane.

UNDER

VOLTAGE

ISL2111

ISL2110, ISL2111

LEVEL SHIFT

UNDER

VOLTAGE

DRIVER

EPAD (DFN Package Only)

+12V

+48V

PWM

ISL2110 ISL2111

FIGURE 1. TWO-SWITCH FORWARD CONVERTER

+48V

PWM

ISL2110 ISL2111

SECONDARY

CIRCUIT

ISOLATION

SECONDARY

CIRCUIT

FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE-CLAMP

ISOLATION

FN6295.3

April 25, 2008

ISL2110, ISL2111

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Absolute Maximum Ratings Thermal Information

Supply Voltage, V

LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . .-0.3V to V

Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . .-0.3V to V

Voltage on HO (Note 4) . . . . . . . . . . . . . . V

Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V

Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .118V

Average Current in V

DD, VHB

- VHS (Notes 3, 4) . . . . . . . .-0.3V to 18V

- 0.3V to V

to HB Diode . . . . . . . . . . . . . . . . . . 100mA

DD HB

+ 0.3V + 0.3V + 0.3V

Maximum Recommended Operating Conditions

Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 14V

Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V

Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V

Voltage on HB . .V

HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty.

NOTES:

3. The ISL2110 and ISL21 11 are capable of derated operation at supply voltages exceeding 14V. Figure 22 shows the high-side voltage derating curve for this mode of operation.

4. All voltages referenced to V

5. θ

is measured in free air with the component mounted on a high effective thermal conductivity test board. See Tech Brief TB379 for details.

is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See

6. θ

Tech Brief TB379.

7. For θ

8. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. T emperature limits established by characterization

, the “case temp” location is the center of the exposed metal pad on the package underside.

and are not production tested.

+ 7V to VHS + 14V and VDD - 1V to V

unless otherwise specified.

+ 100V

Thermal Resistance (Typical) θ

8 Ld SOIC (Note 5) . . . . . . . . . . . . . . . 95 N/A

10 Ld TDFN (Notes 6, 7) . . . . . . . . . . . 42 5.5

12 Ld DFN (Notes 6, 7) . . . . . . . . . . . . 40 5.5

Max Power Dissipation at +25°C in Free Air

8 Ld SOIC (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W

10 Ld TDFN (Notes 6, 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W

12 Ld DFN (Notes 6, 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W

Storage Temperature Range. . . . . . . . . . . . . . . . . . . -65°C to +150°C

Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C

Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

(°C/W) θJC (°C/W)

Electrical Specifications V

PARAMETERS SYMBOL TEST CONDITIONS

SUPPLY CURRENTS

Quiescent Current I

Operating Current I

Total HB Quiescent Current I Total HB Operating Current I HB to V HB to V

INPUT PINS

Low Level Input Voltage Threshold V Low Level Input Voltage Threshold V High Level Input Voltage Threshold V High Level Input Voltage Threshold V Input Voltage Hysteresis V Input Pull-Down Resistance R

Current, Quiescent I

Current, Operating I

= V

DD DDO DDO

HB HBO HBS

HBSO

IL IH IH

IHYS

= 12V, V

= V

ISL2110; LI = HI = 0V - 0.1 0.25 - 0.3 mA ISL2111; LI = HI = 0V - 0.3 0.45 - 0.55 mA ISL2110; f = 500kHz - 3.4 5.0 - 5.5 mA ISL2111; f = 500kHz - 3.5 5.0 - 5.5 mA LI = HI = 0V - 0.1 0.15 - 0.2 mA f = 500kHz - 3.4 5.0 - 5.5 mA LI = HI = 0V; VHB = VHS = 114V - 0.05 1.5 - 10 µA f = 500kHz; VHB = VHS = 114V - 1.2 - - - mA

ISL2110 3.7 4.4 - 3.5 - V ISL2111 1.4 1.8 - 1.2 - V ISL2110 - 6.6 7.4 - 7.6 V ISL2111 - 1.8 2.2 - 2.4 V ISL2110 - 2.2 - - - V

= 0V, No Load on LO or HO, Unless Otherwise Specified.

= +25°C TJ = -40°C to +125°C

(Note 8)

- 210 - 100 500 kΩ

MIN

MAX

(Note 8)

UNITSMIN TYP MAX

FN6295.3

April 25, 2008

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