High Voltage Input Precision, Low Noise
FGA™ Voltage References
The ISL21009 FGA™ voltage references are extremely low
power, high precision, and low noise voltage references
fabricated on Intersil’s proprietary Floating Gate Analog
technology. The ISL21009 features very low noise (4.5µV
P-P
for 0.1Hz to 10Hz), low operating current (180µA, Max), and
3ppm/°C of temperature drift. In addition, the ISL21009
family features guaranteed initial accuracy as low as
±0.5mV.
This combination of high initial accuracy, low power and low
output noise performance of the ISL21009 enables versatile
high performance control and data acquisition applications
with low power consumption.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
FGA is a trademark of Intersil Corporation. Copyright Intersil Americas Inc. 2007. All Rights Reserved
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
Pin Descriptions
PIN NUMBERPIN NAMEDESCRIPTION
1GND or NCCan be either Ground or No Connect
2VINPower Supply Input Connection
4GNDGround Connection
5TRIMAllows user trim typically ±2.5%. Leave Unconnected when unused.
6VOUTVoltage Reference Output Connection
3, 7, 8DNCDo Not Connect; Internal Connection – Must Be Left Floating
Ordering Information
ISL21009
PART NUMBER
(Notes 1, 2)
ISL21009BFB812Z21009BF Z121.250±0.5mV, 3ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009CFB812Z21009CF Z121.250±1.0mV, 5ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009DFB812Z21009DF Z121.250±2.0mV, 10ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009BFB825Z21009BF Z252.500±0.5mV, 3ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009CFB825Z21009CF Z252.500 ±1.0mV, 5ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009DFB825Z21009DF Z252.500±2.0mV, 10ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009BFB841Z21009BF Z414.096±0.5mV, 3ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009CFB841Z21009CF Z414.096 ±1.0mV, 5ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009DFB841Z21009DF Z414.096±2.0mV, 10ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009BFB850Z21009BF Z505.000±0.5mV, 3ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009CFB850Z21009CF Z505.000 ±1.0mV, 5ppm/°C-40 to +1258 Ld SOICM8.15
ISL21009DFB850Z21009DF Z505.000±2.0mV, 10ppm/°C-40 to +1258 Ld SOICM8.15
NOTES:
1. These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte
tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC
J STD-020.
2. Add “-TK” suffix for tape and reel. Please refer to TB347 for details on reel specifications.
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
IMPORT ANT NOTE: A ll p arameters having Min/Max specificati ons are gua ranteed. Typ values are for information purposes only. Unless otherwise note d, all test s ar e at
the specified temperature and are pulsed tests, theref ore: T
= TC = T
J
A
NOTE:
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3. θ
JA
Temperature Range (Industrial) . . . . . . . . . . . . . . . -40°C to +125°C
Short Circuit Current TA = +25°C, V
Turn-on Settling TimeV
= ±0.1%100µs
OUT
tied to GND10mA
OUT
Ripple Rejectionf = 10kHz60dB
e
N
V
N
Electrical Specifications (ISL21009-12, V
Output Voltage Noise0.1Hz ≤ f ≤ 10Hz 4.5µV
Broadband Voltage Noise10Hz ≤ f ≤ 1kHz2.2µV
= 1.250V) V
OUT
= 5.0V, TA = -40°C to +125°C, I
IN
= 0, unless otherwise specified.
OUT
PARAMETERDESCRIPTIONCONDITIONSMINTYPMAXUNIT
V
OUT
V
IN
ΔV
/ΔV
OUT
ΔV
/ΔI
OUT
/ΔT
ΔV
OUT
ΔV
/ΔtLong Term Stability (Note 6)TA = +25°C50ppm
OUT
Output Voltage1.250V
Input Voltage Range3.516.5V
Line Regulation3.5V < VIN < 5.5V50150µV/V
IN
VIN < 16.5V1050µV/V
5.5V <
Load RegulationSourcing: 0mA ≤ I
OUT
Sinking: -7mA ≤ I
Thermal Hysteresis (Note 5)ΔTA = +165°C50ppm
A
≤ 7mA1050µV/mA
OUT
≤ 0mA20100µV/mA
OUT
P-P
RMS
4
FN6327.6
September 12, 2007
ISL21009
Electrical Specifications (ISL21009-25, V
= 2.50V) V
OUT
= 5.0V, TA = -40°C to +125°C, I
IN
= 0, unless otherwise specified.
OUT
PARAMETERDESCRIPTIONCONDITIONSMINTYPMAXUNIT
V
OUT
V
IN
ΔV
/ΔV
OUT
ΔV
/ΔI
OUT
ΔV
/ΔT
OUT
ΔV
/ΔtLong Term Stability (Note 6)TA = +25°C50ppm
OUT
Electrical Specifications (ISL21009-41, V
Output Voltage2.500V
Input Voltage Range3.516.5V
Line Regulation3.5V < VIN < 5.5V50150µV/V
IN
VIN < 16.5V1050µV/V
5.5V <
Load RegulationSourcing: 0mA ≤ I
OUT
Sinking: -7mA ≤ I
Thermal Hysteresis (Note 5)ΔTA = +165°C50ppm
A
= 4.096V) V
OUT
≤ 7mA1050µV/mA
OUT
≤ 0mA20100µV/mA
OUT
= 5.0V, TA = -40°C to +125°C, I
IN
specified.
= 0 unless otherwise
OUT
PARAMETERDESCRIPTIONCONDITIONSMINTYPMAXUNIT
V
OUT
V
IN
ΔV
/ΔV
OUT
ΔV
/ΔI
OUT
ΔV
/ΔT
OUT
ΔV
/ΔtLong Term Stability (Note 6)TA = +25°C50ppm
OUT
Output Voltage4.096V
Input Voltage Range4.516.5V
Line Regulation4.5V < VIN < 16.5V50200µV/V
IN
Load RegulationSourcing: 0mA ≤ I
OUT
Sinking: -5mA ≤ I
Thermal Hysteresis (Note 5)ΔTA = +165°C50ppm
A
≤ 5mA20100µV/mA
OUT
≤ 0mA20150µV/mA
OUT
Electrical Specifications (ISL21009-50, V
= 5.0V) V
OUT
= 10.0V, TA = -40°C to +125°C, I
IN
= 0 unless otherwise specified.
OUT
PARAMETERDESCRIPTIONCONDITIONSMINTYPMAXUNIT
V
OUT
V
IN
ΔV
/ΔV
OUT
ΔV
/ΔI
OUT
/ΔT
ΔV
OUT
ΔV
/ΔtLong Term Stability (Note 6)TA = +25°C50ppm
OUT
Output Voltage5.000V
Input Voltage Range5.516.5V
Line Regulation5.5V < VIN < 16.5V2090µV/V
IN
Load RegulationSourcing: 0mA ≤ I
OUT
Sinking: -7mA ≤ I
Thermal Hysteresis (Note 5)ΔTA = +165°C50ppm
A
≤ 7mA10100µV/mA
OUT
≤ 0mA20150µV/mA
OUT
NOTES:
4. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in V
temperature range; in this case, -40°C to +125°C = +165°C.
5. Thermal Hysteresis is the change of V
at T
= +25°C for the device under test. The device is temperature cycled and a second V
A
between the initial V
reading and the second V
OUT
measured @ TA = +25°C after temperature cycling over a specified range, ΔTA. V
OUT
reading is then expressed in ppm. For Δ TA = +165°C, the device under test is cycled
OUT
measurement is taken at +25°C. The difference
OUT
is divided by the
OUT
is read initially
OUT
from +25°C to +125°C to -40°C to +25°C.
6. Long term drift is logarithmic in nature and diminishes over time. Drift after the first 1000 hours will be approximately 10ppm/sqrt(1kHrs).
5
FN6327.6
September 12, 2007
ISL21009
Typical Performance Curves (ISL21009-12) (R
110
105
100
95
(µA)
IN
I
90
85
80
57911131517
UNIT 2
FIGURE 2. IIN vs VIN, 3 UNITSFIGURE 3. IIN vs VIN, 3 TEMPERATURES
60
40
= 5V
IN
20
(µV)
0
OUT
ΔV
-20
-40
NORMALIZED TO V
-60
3.55.57.59.511.513.515.5
UNIT 1
UNIT 3
VIN (V)
UNIT 3
V
(V)
IN
UNIT 1
UNIT 2
= 100kΩ)
EXT
(µV)
OUT
ΔV
100
95
90
(µA)
IN
I
85
80
57911131517
60
40
20
= 5.0V)
IN
0
-20
-40
-60
-80
(NORMALIZED TO V
-100
3.505.507.509.5011.513.515.5
+125°C
+25°C
+25°C
+125°C
VIN (V)
(V)
V
IN
-40°C
-40°C
FIGURE 4. LINE REGULATION, 3 UNITSFIGURE 5. LINE REGULATION OVER-TEMPERATURE
vs TEMPERATUREFIGURE 50. PSRR AT DIFFERENT CAPACITIVE LOADS
OUT
UNIT 1
= 100kΩ) (Continued)
EXT
0
VIN (DC) = 10V
-10
V
-20
IN
-30
-40
-50
-60
PSRR (dB)
-70
-80
-90
-100
1101001k10k100k1M10M
(AC) RIPPLE = 50mV
FREQUENCY (Hz)
VIN = 10V
DV
= 1V
IN
P-P
NO LOAD
10nF
100nF
1nF
FIGURE 51. LINE TRANSIENT RESPONSE, NO CAPACITIVE
LOAD
12
10
(V)
8
OUT
6
4
(V) AND V
IN
V
2
0
050100150200250300
270nA
V
IN
450nA
340nA
TIME (µs)
FIGURE 53. TURN-ON TIME
14
FIGURE 52. LINE TRANSIENT RESPONSE, 0.001µF LOAD
CAPACITANCE
120
100
80
(W)
60
OUT
Z
40
20
0
1101001k10k100k1M
FREQUENCY (Hz)
FIGURE 54. Z
10nF
vs FREQUENCY
OUT
1nF
NO LOAD
September 12, 2007
FN6327.6
ISL21009
Typical Performance Curves (ISL21009-50) (R
GAIN IS x1000
NOISE IS 4.5µV
2mV/DIV
FIGURE 55. V
P-P
NOISE, 0.1Hz TO 10Hz
OUT
= 100kΩ) (Continued)
EXT
FIGURE 56. LOAD TRANSIENT RESPONSE
50µA
-50µA
-7mA
FIGURE 57. LOAD TRANSIENT RESPONSE
Applications Information
FGA Technology
The ISL21009 voltage reference uses floating gate
technology to create references with very low drift and supply
current. Essentially the charge stored on a floating gate cell is
set precisely in manufacturing. The reference volta ge output
itself is a buffered version of the floating gate voltage. The
resulting reference device has excellent characteristics, which
are unique in the industry: very low temperature drift, hig h
initial accuracy, and almost zero supply current. Also, the
reference voltage itself is not limited by volta ge ban dgap s or
zener settings, so a wide range of reference voltages can be
programmed (standard voltage settings are provided, but
customer-specific voltages are available).
7mA
The process used for these reference devices is a floating
gate CMOS process and the amplifier circuitry uses CMOS
transistors for amplifier and output transistor circuitry. While
providing excellent accuracy, there are limitations in output
noise level and load regulation due to the MOS device
characteristics. These limitations are addressed with circuit
techniques discussed in other sections.
Micropower Operation
The ISL21009 consumes extremely low supply current due
to the proprietary FGA technology. Low noise performance is
achieved using optimized biasing techniques. Supply current
is typically 95µA and noise is 4.5µV
low noise portable applications such as handheld meters
and instruments.
benefitting precision,
P-P
15
FN6327.6
September 12, 2007
ISL21009
Data Converters in particular can utilize the ISL21009 as an
external voltage reference. Low power DAC and ADC
circuits will realize maximum resolution with lowest noise.
Board Mounting Considerations
For applications requiring the highest accuracy, board
mounting location should be reviewed. The device uses a
plastic SOIC package, which will subject the die to mild
stresses when the PC board is heated and cooled, slightly
changing the shape. Placing the device in areas subject to
slight twisting can cause degradation of the accuracy of the
reference voltage due to these die stresses. It is normally
best to place the device near the edge of a board, or the
shortest side, as the axis of bending is most limited at that
location. Mounting the device in a cutout also minimizes flex.
Obviously mounting the device on flexprint or extremely thin
PC material will likewise cause loss of reference accuracy.
Noise Performance and Reduction
The output noise voltage in a 0.1Hz to 10Hz bandwidth is
typically 4.5µV
bandpass filter made of a 1-pole high-pass filter with a corner
frequency at 0.1Hz and a 2-pole low-pass filter with a corner
frequency at 12.6Hz to create a filter with a 9.9Hz bandwidth.
Noise in the 10kHz to 1MHz bandwidth is approximately
40µV
with no capacitance on the output. This noise
P-P
measurement is made with a 2 decade bandpass filter made
of a 1-pole high-pass filter with a corner frequency at 1/10 of
the center frequency and 1-pole low-pass filter with a corner
frequency at 10x the center frequency. Load capacitance up
to 1000pF can be added but will result in only marginal
improvements in output noise and transient response. The
output stage of the ISL21009 is not designed to drive heavily
capactive loads, so for load capacitances above 0.001µF, the
noise reduction network shown in Figure 58 is recommended.
This network reduces noise significantly over the full
bandwidth. Noise is reduced to less than 20µV
1MHz using this network with a 0.01µF capacitor and a 2kΩ
resistor in series with a 10µF capacitor . Also, tra nsient
response is improved with higher value output capacitor. The
0.01µF value can be increased for better load transient
response with little sacrifice in output stability.
.
VIN = 5.0V
0.1µF
. The noise measurement is made with a
P-P
from 1Hz to
P-P
10µF
V
IN
ISL21009-25
GND
V
O
0.01µF
2kΩ
10µF
Turn-On Time
The ISL21009 devices have low supply current and thus the
time to bias up internal circuitry to final values will be longer
than with higher power references. Normal turn-on time is
typically 100µs. This is shown in Figure 25. Circuit design
must take this into account when looking at power-up delays
or sequencing.
Temperature Coefficient
The limits stated for temperature coefficient (tempco) are
governed by the method of measurement. The overwhelming
standard for specifying the temperature drift of a reference is to
measure the reference voltage at two temperatures, take the
total variation, (V
extremes of measurement (T
HIGH
– V
), and divide by the temperature
LOW
HIGH–TLOW
). The result is
divided by the nominal reference voltage (at T = +25°C) and
multiplied by 10
6
to yield ppm/°C. This is the “Box” method for
specifying temperature coefficient.
Output Voltage Adjustment
The output voltage can be adjusted up or down by 2.5% by
placing a potentiometer from V
wiper to the TRIM pin. The TRIM input is high impedance so no
series resistance is needed. The resistor in the potentiometer
should be a low tempco (<50ppm/°C) and the resulting voltage
divider should have very low tempco <5ppm/°C. A digital
potentiometer such as the ISL95810 provides a low tempco
resistance and excellent resistor and tempco matching for trim
applications.
to GND and connecting the
OUT
FIGURE 58. HANDLING HIGH LOAD CAPACITANCE
16
FN6327.6
September 12, 2007
Typical Application Circuits
VIN = +5.0V
ISL21009
R = 200Ω
V
IN
2N2905
+3.5V TO 16.5V
ISL21009
V
= 2.50V
OUT
V
OUT
2.5V/50mA
0.001µF
GND
FIGURE 59. PRECISION 2.5V, 50mA REFERENCE
V
IN
V
ISL21009-25
V
= 2.50V
OUT
GND
0.1µF
OUT
10µF
0.001µF
V
R
2-WIRE BUS
SDA
SCL
CC
X9119
V
SS
H
R
L
+
EL8178
–
V
OUT
(UNBUFFERED)
V
(BUFFERED)
OUT
FIGURE 60. 2.5V FULL SCALE LOW-DRIFT, LOW NOISE, 10-BIT ADJUSTABLE VOLTAGE SOURCE
17
FN6327.6
September 12, 2007
Typical Application Circuits (Continued)
+3.5V TO 16.5V
V
IN
V
OUT
ISL21009-25
GND
FIGURE 61. KELVIN SENSED LOAD
0.1µF
ISL21009
10µF
+
–
EL8178
V
OUT
SENSE
LOAD
+3.5V TO 16.5V
10µF
0.1µF
V
IN
V
2.5V ±2.5%
OUT
ISL21009-25
TRIM
GND
2
C BUS
I
V
SDA
SCL
ISL95810
V
SS
CC
R
H
R
L
FIGURE 62. OUTPUT ADJUSTMENT USING THE TRIM PIN
18
FN6327.6
September 12, 2007
Small Outline Plastic Packages (SOIC)
ISL21009
N
INDEX
AREA
123
-A-
E
-B-
SEATING PLANE
D
A
-C-
0.25(0.010)BMM
H
L
h x 45°
α
e
B
0.25(0.010)C AMBS
M
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implicat ion or oth erwise u nde r any p a tent or p at ent r ights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
19
FN6327.6
September 12, 2007
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