Intersil IRFU9120, IRFR9120 Datasheet

IRFR9120, IRFU9120

Data Sheet July 1999

5.6A, 100V, 0.600 Ohm, P-Channel Power
MOSFETs

These advancedpowerMOSFETsaredesigned,tested,and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. They are
P-Channel enhancement mode silicon gate power field
effecttransistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate-drive power. They can be
operated directly from integrated circuits.

Formerly developmental type TA17501.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFR9120 TO-252AA IF9120
IRFU9120 TO-251AA IF9120

NOTE: When ordering use the entirepart number.Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR91209A.

File Number

Features

• 5.6A, 100V

DS(ON)

= 0.600Ω

•r

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

3987.4

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN (FLANGE)

DRAIN (FLANGE)

4-83

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFR9120, IRFU9120

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFR9120, IRFU9120 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-100 V

-100 V
±20 V

5.6

Refer to UIS Curve

42

0.33

-55 to 150

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source on Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate to Drain Charge Q
Gate to Source Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g

gd

gs

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -100 - - V

= VDS, ID = 250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 150oC - - -250 µA

DSS

VGS = ±20V - - ±100 nA

= 3.4A, VGS = -10V, (Figure 9) - - 0.600 W

VDD = -50V, ID = 6.8A, RL = 7.1Ω,
VGS = -10V, RGS =18Ω
(Figures 13, 16, 17)

- - 60 ns

- 9.6 - ns

-29 - ns

-21 - ns

-25 - ns

- - 60 ns

VGS = 0V to -10V VDD = -80V,

ID = 5.6A,
RL = 14.3Ω
I

= 1.0mA

G(REF)

- - 18 nC

--9nC

--3nC

VDS = -25V, VGS = 0V, f = 1MHz - 485 - pF

- 170 - pF

-45 - pF

- - 3.00oC/W

- - 100oC/W

Source to Drain Diode Ratings and Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

SDISD

rr

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)

= -5.6A - - -6.3 V

ISD = -6.8A, dISD/dt = -100A/µs - 130 150 ns

- 0.70 1.4 µC

4-84

IRFR9120, IRFU9120

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZEDPOWER DISSIPATION vs CASE

TEMPERATURE

10

0.5

1

0.2

0.1

0.1

THERMAL IMPEDANCE

0.01
10

0.05

0.02

0.01

SINGLE PULSE

-5

-4

10

10

, TRANSIENT

θJC

Z

-6

-5

-4

-3

-2

, DRAIN CURRENT (A)

D

I

-1

0

25 50 75 100 125 150

FIGURE 2. MAXIMUMCONTINUOUSDRAINCURRENT vs

CASE TEMPERATURE

-3

t1, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

P

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

10

DM

0

1/t2

θ JC

t

1

+ T

t

2

C

1

10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

-30

-10

OPERATION IN THIS
AREA MAY BE

-1
LIMITED BY r

, DRAIN CURRENT (A)

D

I

TC = 25oC

= MAX RATED

T

J

-0.1

-1 -10 -100

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

100µs

1ms

10ms

100ms
DC

2

-10
VGS = -20V

1

-10

VGS = -10V

, PEAK CURRENT (A)

DM

I

-10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

0

-5

10

-4

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

150 T



II

-3

10

t, PULSE WIDTH (ms)

-2

10

--------------------- -

=



25



-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-85

–

125

C

TC = 25oC

0

10

1

10