Intersil IRFU9110, IRFR9110 Datasheet
IRFR9110, IRFU9110
Data Sheet July 1999
3.1A, 100V, 1.200 Ohm, P-Channel Power
MOSFETs
These are advancedpowerMOSFETsdesigned,tested,and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement mode silicon gate power
field-effect transistors designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17541.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFR9110 TO-252AA IF9110
IRFU9110 TO-251AA IF9110
NOTE: When ordering, use the entire part number.Add the suffix 9A
to obtain theTO-252AAvariant in the tape and reel, i.e.,IRFR91109A.
File Number
Features
• 3.1A, 100V
DS(ON)
= 1.200Ω
•r
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
4001.3
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
DRAIN (FLANGE)
4-77
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
IRFR9110, IRFU9110
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFR9110, IRFU9110 UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DSS
DGR
GS
DM
AS
D
Refer to Peak Current Curve
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
-100 V
-100 V
±20 V
3.1
Refer to UIS Curve
25
0.2
-55 to 150
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate to Drain Charge Q
Gate to Source Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g
gd
gs
ISS
OSS
RSS
θJC
θJA
= 250µA, VGS = 0V -100 - - V
= VDS, ID = 250µA -2.0 - -4.0 V
VDS = -100V,
VGS = 0V
TC = 25oC---1µA
TC = 150oC - - -50 µA
VGS = ±20V - - 100 nA
= 1.9A, VGS = -10V - - 1.200 Ω
VDD = -50V, ID = 4A
RL = 11Ω, VGS = -10V
RGS = 24Ω
- - 50 ns
-10-ns
-27-ns
-15-ns
-17-ns
- - 50 ns
VGS = 0 to -10V VDD = -80V,
ID = 3.1A,
RL = 25.8Ω
- - 8.7 nC
- - 4.1 nC
- - 2.2 nC
VDS = -25V, VGS = 0V
f = 1MHz
- 290 - pF
-94-pF
-18-pF
- - 5.00
- - 100
o
o
C/W
C/W
Source to Drain Diode Ratings and Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
4-78
SD
RR
ISD = -3.1A - - -5.5 V
ISD = -4.0A, dISD/dt = -100A/µs - 105 160 ns
rr
0.51 1.0 µC
IRFR9110, IRFU9110
Typical Performance Curves
Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0.0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZEDPOWER DISSIPATION vs CASE
TEMPERATURE
10
0.5
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
, DRAIN CURRENT (A)
D
I
-0.5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUMCONTINUOUSDRAINCURRENT vs
CASE TEMPERATURE
0.2
1
0.1
0.05
, TRANSIENT
θJC
Z
0.1
THERMAL IMPEDANCE
0.01
0.02
0.01
SINGLE PULSE
-5
10
-4
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
-20
TC = 25oC, TJ = MAX RATED
-10
-1
, DRAIN CURRENT (A)
D
I
-0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
MAX = -100V
DSS
-1 -10 -100
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
-3
10
-2
10
t1, RECTANGULAR PULSE DURATION (s)
-30
100µs
-10
1ms
10ms
100ms
DC
VGS = -10V
, PEAK CURRENT CAPABILITY (A)
DM
I
-1
-5
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ= PDM x Z
-1
10
VGS = -20V
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-4
10
-3
10
t, PULSE WIDTH (s)
P
10
DM
t
1
θJC
0
10
II
=
25
-2
10
t
2
2
+ T
C
150 T
–
----------------------125
-1
1
10
C
TC = 25oC
0
10
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-79
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