Intersil IRFU320, IRFR320 Datasheet

IRFR320, IRFU320

Data Sheet July 1999

3.1A, 400V, 1.800 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA17404.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFR320 TO-252AA IFR320
IRFU320 TO-251AA IFU320

NOTE: When ordering, use the entire part number.Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e., IRFR3209A.

File Number

Features

• 3.1A, 400V

DS(ON)

= 1.800Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2412.3

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

DRAIN

SOURCE

DRAIN

(FLANGE)

4-395

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFR320, IRFU320

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFR320, IRFU320 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

400 V
400 V

3.1

2.0
12 A

±20 V

50 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

190 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

DSSID

GS(TH)VGS

DSS

D(ON)VDS

= 250µA, VGS = 0V, (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V

VDS = Rated BV

= 0.8 x Rated BV

V

DS

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V,

3.1 - - A

(Figure 7)
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

GSS

VGS = ±20V - - ±100 nA

= 1.7A, VGS = 10V, (Figures 8, 9) - 1.600 1.800 Ω

VDS≥ 10V, ID = 2.0A, (Figure 12) 1.7 2.6 - S

fs

= 200V, ID≈ 3.1A, RGS = 18Ω, RL = 63Ω,

VGS = 10V

r

MOSFET Switching Times are Essentially Indepen-

dent of Operating Temperature

f

= 10V, ID = 3.1A, VDS = 0.8 x Rated BV

I

= 1.5mA, (Figure 14)

G(REF)

Gate Charge is Essentially Independent of Operat-

gs

ing Temperature

gd

VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 350 - pF

ISS
OSS
RSS

Measured From the Drain

D

Lead, 6.0mm (0.25in) from
Package to Center
of Die

Measured From the

S

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

Source Lead, 6.0mm
(0.25in) from Package to
Source Bonding Pad

θJC

Typical Solder Mount - - 110oC/W

θJA

G

L

L

DSS,

D

D

S

S

-1015ns

-1421ns

-3045ns

-1320ns

-1320nC

- 2.2 3.3 nC

- 7.2 11 nC

-64-pF

- 8.1 - pF

- 4.5 - nH

- 7.5 - nH

- - 2.5oC/W

4-396

IRFR320, IRFU320

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V

SD

Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 3.1mH, RGS= 25Ω, peak IAS= 3.1A.

Modified MOSFET
Symbol Showing the In­tegral Reverse P-N

D

- - 3.1 A

- - 12 A

Junction Rectifier

G

S

TJ = 25oC, ISD = 3.1A, VGS = 0V,

- - 1.6 V

(Figure 13)
TJ = 25oC, ISD = 3.1A, dISD/dt = 100A/µs 120 270 600 ns

rr

TJ = 25oC, ISD = 3.1A, dISD/dt = 100A/µs 0.64 1.4 3.0 µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

T

C

, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

0.5

1

0.2

0.1

0.05

0.02

0.1

0.01

-2

-5

10

SINGLE PULSE

-4

10

10

, TRANSIENT THERMAL IMPEDANCE

θJC

10

Z

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

4.0

3.2

2.4

1.6

, DRAIN CURRENT (A)

D

I

0.8

0

150

175

25 75 125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t1, RECTANGULAR PULSE DURATION (s)

-2

10

50 100

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

t

1

t

θJC

1/t2

x R

2

θJC

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

0.1 1 10

+ T

150

C

4-397