Intersil IRFU220, IRFR220 Datasheet

IRFR220, IRFU220

Data Sheet July 1999

4.6A, 200V, 0.800 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA9600.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFR220 TO-252AA IFR220
IRFU220 TO-251AA IFU220

NOTE: When ordering, use the entire part number.

File Number

Features

• 4.6A, 200V

DS(ON)

= 0.800Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

2410.2

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN (FLANGE)

DRAIN

GATE

GATE

DRAIN

SOURCE

S

DRAIN

(FLANGE)

4-389

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFR220, IRFU220

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specfied

C

IRFR220, IRFU220 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

200 V
200 V

4.6 A

2.9 A
18 A

±20 V

50 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

85 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

DSSID

GS(TH)VGS

DSS

D(ON)VDS

= 250µA, VGS = 0V, (Figure 10) 200 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V,

4.6 - - A

(Figure 7)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

GSS

VGS = ±20V - - ±100 nA

= 2.4A, VGS = 10V, (Figures 8, 9) - 0.47 0.800 Ω

VDS≥ 50V, ID = 2.4A, (Figure 12) 1.7 2.6 - S

fs

= 100V, I

VGS = 10V

r

MOSFET Switching Times are Essentially Indepen­dent of Operating Temperature

f

= 10V, ID = 4.6A, VDS = 0.8 x Rated BV
I

= 1.5mA, (Figure 14)

g(REF)

Gate Charge is Essentially Independent of Operat-

gs

ing Temperature

gd

VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 330 - pF

ISS
OSS
RSS

Measured From the Drain

D

Lead, 6.0mm (0.25in)
FromPackage to Centerof
Die

Measured From the

S

Source Lead, 6.0mm
(0.25in) From Package to
Source Bonding Pad

θJC

Typical Solder Mount - - 110oC/W

θJA

≈ 4.6A, R

D

= 18Ω, RL = 18Ω,

GS

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

G

- 8.8 13 ns

-2741ns

-2132ns

-1421ns

,

DSS

-1218nC

- 2.3 3.4 nC

- 4.5 6.8 nC

- 120 - pF

-41-pF

- 4.5 - nH

D

L

D

L

S

S

- 7.5 - nH

- - 2.5oC/W

4-390

IRFR220, IRFU220

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

Source to Drain Diode Voltage (Note 2) V

SD

SDM

SD

Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 10V, starting TJ= 25oC, L = 6.18mH, RG= 50Ω,peak IAS = 4.6A.

Modified MOSFET Sym­bol Showing the Integral
Reverse P-N Junction

D

- - 4.6 A

- - 18 A

Rectifier

G

S

TJ = 25oC, ISD = 4.6A, VGS = 0V, (Figure 13) - - 1.8 V
TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs 69 170 400 ns

rr

TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs 0.30 0.72 1.8 µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

T

, CASE TEMPERATURE (oC)

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

0.5

1

0.2

0.1

THERMAL IMPEDANCE

-2

10

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

10

, TRANSIENT

θJC

Z

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

25 75 125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

-3

t1, RECTANGULAR PULSE DURATION (S)

-2

10

50 100

TC, CASE TEMPERATURE (oC)

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

0.1 1 10

θJC

1/t2

+ T

150

C

4-391

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE