Intersil IRFR120, IRFU120 Datasheet

IRFR120, IRFU120

Data Sheet July 1999

8.4A, 100V, 0.270 Ohm, N-Channel
Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolarswitching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA09594.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFR120 TO-252AA IRFR120
IRFU120 TO-251AA IRFU120

File Number

Features

• 8.4A, 100V

DS(ON)

= 0.270Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

2414.2

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

DRAIN

SOURCE

S

DRAIN

(FLANGE)

4-377

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFR120, IRFU120

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFR120, IRFU120 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

100 V
100 V

8.4

5.9
34 A

±20 V

50 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 W/oC

Single Pulse Avalanche Energy Rating (Figure 14). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

36 mJ

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 100 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 150oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V 8.4 - - A

VGS = ±20V - - ±500 nA

= 5.9A, VGS = 10V (Figures 8, 9) - 0.25 0.27 Ω
VDS≥ 50V, ID = 5.9A (Figure 12) 2.8 4.2 - S
VDD= 50V, ID≅ 8.4A, RGS = 18Ω, RL = 5.1Ω

MOSFET Switching Times are Essentially
Independent of Operating Temperature

- 8.8 13 ns

-3045ns

-1929ns

-2030ns

= 10V, ID = 8.4A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figure 14) Gate Charge is

G(REF)

Essentially Independent of Operating Temperature

DSS

,

- 9.7 15 nC

- 2.2 3.3 nC

- 2.3 3.4 nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 350 - pF

- 130 - pF

-24-pF

Measured from the Drain
Lead, 6.0mm (0.25in) from
Package to Center of Die

Measured from the Source
Lead, 6.0mm (0.25in) from
Package to Source
Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 4.5 - nH

- 7.5 - nH

- - 3.0oC/W

Typical Solder Mount - - 110oC/W

4-378

Source to Drain Diode Specifications

IRFR120, IRFU120

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 8.4 A

- - 34 A

Junction Rectifier

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

SD

RR

TJ=25oC, ISD= 8.4A, VGS= 0V (Figure 13) - - 2.5 V
TJ = 25oC, ISD = 8.4A, dISD/dt = 100A/µs 55 110 240 ns

rr

TJ = 25oC, ISD = 8.4A, dISD/dt = 100A/µs 0.25 0.53 1.1 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 770µH, RG= 25Ω, Peak IAS= 8.4A.

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

T

C

, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

150

175

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

25 75 125

50 100

TC, CASE TEMPERATURE (oC)

150

UNITS

175

FIGURE 1. NORMALIZED POWERDISSIPATIONvs CASE

TEMPERATURE

10

0.5

1

0.2

0.1

0.05

0.02

0.1

, THERMAL IMPEDANCE

θJC

Z

0.01
SINGLE PULSE

-2

10

-5

10

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-379

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

0.1 1 10

θJC

1/t2

+ T

C