Intersil IRFU110 Datasheet

IRFR110, IRFU110

Data Sheet July 1999 File Number

4.7A, 100V, 0.540 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.

Formerly developmental type TA17441.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFU110 TO-251AA IFU110
IRFR110 TO-252AA IFR110

NOTE: When ordering, use the entire part number.

Features

• 4.7A, 100V

DS(ON)

= 0.540Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

3275.3

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

S

DRAIN (FLANGE)

4-371

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFR110, IRFU110

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFR110, IRFU110 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

100 V
100 V

4.7 A

3.3 A
17 A

±20 V

30 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/oC

Single Pulse Avalanche Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

19 mj

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 10) 100 - - V

= VDS, ID = 250µA 2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V,

DSS

- - 250 µA

TJ = 150oC

On-State Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance

r

D(ON)VDS

GSS

DS(ON)ID

> I

D(ON)

x r

DS(ON)MAX

, VGS = 10V 4.7 - - A

VGS = ±20V - - ±100 nA

= 3.3A, VGS = 10V (Figures 8, 9) - 0.41 0.540 Ω

(Note 4)
Forward Transconductance (Note 4) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

VDS = 50V, IDS = 3.3A (Figure 12) 1.3 2.0 - S

fs

= 50V, I
VGS = 10V

r

MOSFET Switching Times are Essentially Indepen­dent of Operating Temperature

f

= 10V, I

RL = 14Ω, I

gs

Gate Charge is Essentially Independent of Operat­ing Temperature

gd

VGS = 0V, VDS = 25V, f = 1.0MHz

ISS

(Figure 11)

OSS
RSS

Measured from the

D

Drain Lead, 6mm
(0.25in) from Package
to Center of Die

Measured from The

S

Source Lead, 6mm
(0.25in)from Header to
Source Bonding Pad

θJC

Free Air Operation - - 110

θJA

≈ 5.6A, R

D

≈5.6A, V

D

= 1.5mA (Figure 14)

G(REF)

= 24Ω, RL = 9.1Ω,

GS

= 0.8 x Rated BV

DS

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

G

- 7.6 11 ns

-2436ns

-1421ns

-1421ns

,

DSS

- 5.2 7.7 nC

- 1.5 - nC

- 2.2 - nC

- 180 - pF

-82-pF

-15-pF

- 4.5 - nH

D

L

D

L

S

S

- 7.5 - nH

- - 5.0

o
o

C/W
C/W

4-372

IRFR110, IRFU110

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

SD

Modified MOSFET
Symbol Showing the

Pulse Source to Drain Current (Note 2) I

Source to Drain Diode Voltage (Note 4) V
Reverse Recovery Time t
Reverse Recovery Charge Q

SDM

Integral Reverse
P-N Junction Diode

TJ = 25oC, ISD = 4.7A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 46 96 200 ns

rr

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 0.17 0.38 0.83 µC

RR

G

NOTES:

2. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

3. VDD = 25V, starting TJ= 25oC, L = 1.3mH, RG = 25Ω, peak IAS = 4.7A.

4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

D

- - 4.7 A

- - 17 A

S

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

0.5

0.2

1

0.1

0.05

0.1

-5

10

0.02

0.01

SINGLE PULSE

-4

10

10

t1, RECTANGULAR PULSE DURATION (s)

, TRANSIENT

JC

θ

Z

THERMAL IMPEDANCE

0.01

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

25 50 75 100 125 175

, CASE TEMPERATURE (oC)

T

C

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-3

-2

10

-1

10

1

2

1/t2

+ T

JC

C

θ

10

4-373

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE