Intersil IRFU9220, IRFR9220 Datasheet

IRFR9220, IRFU9220

Data Sheet July 1999

3.6A, 200V, 1.500 Ohm, P-Channel Power
MOSFETs

These are advancedpowerMOSFETsdesigned,tested,and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement-mode silicon gate power field­effecttransistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from integrated circuits.

Formerly developmental type TA17502.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFR9220 TO-252AA IF9220
IRFU9220 TO-251AA IF9220

NOTE: Whenorderinguse theentirepartnumber. Addthesuffix 9A
to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.

File Number

Features

• 3.6A, 200V

DS(ON)

= 1.500Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

4015.3

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN (FLANGE)

DRAIN (FLANGE)

4-89

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFR9220, IRFU9220

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFR9220, IRFU9220 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-200 V

-200 V
±20 V

3.6

Refer to UIS Curve

42

0.33

-55 to 150

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate to Drain Charge Q
Gate to Source Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSSVGS

ON

r

f

OFF

gd
gs

ISSVDS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -200 - - V

= VDS, ID = 250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 150oC - - -250 µA

DSS

= ±20V - - ±100 nA

= 2.2A, VGS = -10V (Figure 9) - - 1.500 W

VDD = -100V, ID = 3.9A,
RL = 24Ω, VGS = -10V,
RGS = 18Ω
(Figures 13, 16, 17)

- - 50 ns

- 8.8 - ns

-27- ns

- 7.3 - ns

-19- ns

- - 50 ns

= 0 to -10V VDD = -160V,

ID = 3.9A,
RL = 41Ω
I

G(REF)

= -25V, VGS = 0V, f = 1MHz
(Figure 12)

= 1.45mA

-20- nC

-11- nC

- 3.3 - nC

- 550 - pF

- 110 - pF

-33- pF

- - 3.00oC/W

- - 100

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
Reverse Recovery Charge Q

SDISD

rr

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-90

= -3.6A - - -6.3 V

ISD = -3.6A, dISD/dt = -100A/µs - 150 300 ns

0.97 2.0 µC

IRFR9220, IRFU9220

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZEDPOWER DISSIPATION vs CASE

TEMPERATURE

10

-4

-3

-2

, DRAIN CURRENT (A)

-1

D

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

, TRANSIENT THERMAL IMPEDANCE

JC

θ

Z

0.01
10

-20

-10

-1

, DRAIN CURRENT (A)

D

I

TC = 25oC

= MAX RATED

T

J

-0.1

-1 -10 -100

SINGLE PULSE

-5

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

VDS, DRAIN TO SOURCE VOLTAGE (V)

-4

10

DS(ON)

V

DSS

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

-1

10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

-50

MAX = -200V

100µs

1ms

10ms

100ms
DC

-500

VGS = -20V

-10

VGS = -10V

, PEAK CURRENT CAPABILITY (A)

DM

I

-1

-5

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ= PDM x Z

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

-3

10

10

t, PULSE WIDTH (s)

1/t2

+ T

JC

θ

0

10

150 T



=

II

-2

-----------------------



25



-1

10

C

–

125

C

TC = 25oC

1

10

0

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-91