Intersil IRFU410, IRFR410 Datasheet

IRFR410, IRFU410

Data Sheet July 1999 File Number

1.5A, 500V, 7.000 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA17445.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFU410 TO-251AA IFU410
IRFR410 TO-252AA IFR410

NOTE: When ordering, use the entire part number.

Features

• 1.5A, 500V

DS(ON)

= 7.000Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• High Input Impedance

o

C Operating Temperature

• 150

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

3372.2

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

S

DRAIN (FLANGE)

4-401

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFR410, IRFU410

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFR410, IRFU410 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

500 V
500 V

1.5

1.2

3.0 A

±20 V

42 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 W/oC

Single Pulse Avalanche Rating (See Figure 5) (Note 4) . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

Refer to UIS Curve mJ

-55 to 150

300
260

o

o
o

C

C
C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Temperature Coefficient of

Breakdown Voltage
Gate to Source Threshold Voltage V

V

DSS

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 3) r

DS(ON)ID

Forward Transconductance (Note 3) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

∆B-

/∆T

J

DSS

GSS

fs

r

f

gs

gd

ISS

OSS

RSS

= 250µA, VGS = 0V 500 - - V

Reference to 25oC, ID = 250µA - 0.61 - V/oC

= VDS, ID = 250µA 2-4V
VDS = 500V, VGS = 0V - - 25 µA
VDS = 500V, VGS = 0V, TJ = 125oC - - 250 µA
VGS = ±20V - - ±100 nA

= 1.5A, VGS = 10V, (Figure 9) - - 7.000 Ω
VDS = 50V, IDS = 0.75A, (Figure 8) 0.5 - - S
VDD= 250V, ID≈ 1.5A, RGS=24Ω,RL= 167Ω,

-7-ns
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-10-ns

-24-ns

-15-ns
VGS= 10V, ID ≈ 1.5A, VDS = 0.8 x Rated BV

DSS

,

- 9 12 nC
(Figure 12)
Gate Charge is Essentially Independent of
Operating Temperature

VGS = 0V, VDS = 25V, f = 1.0MHz,

- 1.1 1.4 nC

-57nC

- 210 - pF
(Figure 10)

-30-pF

-7-pF

4-402

IRFR410, IRFU410

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

I

SDM

SD

Measured From the

D

Drain Lead, 6mm
(0.25in) From Package
to Center of Die

Measured From The

S

Source Lead, 6mm

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

- 4.5 - nH

- 7.5 - nH

(0.25in) From Header
to Source Bonding Pad

θJC

Free Air Operation - - 110

θJA

Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode

G

L

S

S

- - 3.0

D

- - 1.5 A

- - 3.0 A

G

o

o

C/W
C/W

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

TJ = 25oC, ISD = 1.5A, VGS = 0V, (Figure 11) - - 2.0 V

SD

TJ = 25oC, ISD = 1.5A, dISD/dt = 100A/µs 130 - 520 ns

rr

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve. (Figure 3)

4. VDD = 50V, starting TJ= 25oC, L = 40µH, RG = 25Ω, peak IAS = 1.5A.

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

2.0

1.5

1.0

, DRAIN CURRENT (A)

0.5

D

I

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

4-403

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE