Intersil IRFU214, IRFR214 Datasheet
IRFR214, IRFU214
Data Sheet July 1999 File Number
2.2A, 250V, 2.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are
advanced power MOSFETs are designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and
low gate-drive power. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA17443.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFR214 TO-252AA IRFR214
IRFU214 TO-251AA IRFU214
NOTE: When ordering, use the entire part number.
Features
• 2.2A, 250V
DS(ON)
= 2.000Ω
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
o
C Operating Temperature
• 150
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
3274.2
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-383
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
IRFR214, IRFU214
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFR214, IRFU214 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
D
DM
GS
D
250 V
250 V
2.2
1.4
8.8 A
±20 V
25 W
A
A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
as
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
61 mJ
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. TJ = 25oC TO 125oC
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
On-State Drain Current I
D(ON)VDS
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 4) r
DS(ON)ID
Forward Transconductance (Note 4) g
Turn-On Delay Time t
d(ON)VDD
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
g(TOT)VGS
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
GSS
fs
r
f
gs
gd
ISS
OSS
RSS
= 250µA, VGS = 0V 250 - - V
= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS =0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
, VGS = 0V
DSS
- - 250 µA
TJ = 150oC
> I
D(ON)
x r
DS(ON)MAX
, VGS = 10V 2.2 - - A
VGS = ±20V - - ±100 nA
= 1.3A, VGS = 10V (Figure 8) - 1.6 2.000 Ω
VDS = ≥ 50V, IDS = 1.3A 1.1 - - S
= 0.5 x Rated BV
≈ 2.7A, RGS=24Ω,
DSS,ID
- 7.0 - ns
RL = 4.5Ω,VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 7.6 - ns
-16- ns
- 7.0 - ns
= 10V, ID≈ 5.6A, VDS= 0.8 x Rated BV
DSS
,
- - 10 nC
(Figure 11)
Gate Charge is Essentially Independent of Operating Temperature
VGS = 0V, VDS = 25V, f = 1.0MHz
- - 1.8 nC
- - 5.5 nC
- 140 - pF
(Figure 9)
-42-pF
- 9.6 - pF
4-384
Loading...