Intersil IRFPG40 Datasheet

IRFPG40

Data Sheet July 1999

4.3A, 1000V, 3.500 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09850.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFPG40 TO-247 IRFPG40

NOTE: When ordering, include the entire part number.

File Number

Features

• 4.3A, 1000V

•r

• UIS SOA Rating Curve (Single Pulse)

• -55

= 3.500Ω

DS(ON)

o

C to 150oC Operating and Storage Temperature

Symbol

D

G

S

2879.2

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN
(TAB)

4-365

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFPG40

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFPG40 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

DM

GS

D

1000 V
1000 V

4.3 A
17 A

±20 V

150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

490 mJ

-55 to 150

300

260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)ID

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

θJC
θJA

= 250µA, VGS = 0V (Figure 9) 1000 - V

= VGS, ID = 250µA 2.0 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - 25 µA

DSS

, VGS = 0V, TJ = 150oC - 250 µA

DSS

VGS = ±20V - ±100 nA

= 2.5A, VGS = 10V (Figures 7, 8) - 3.5 Ω
ID = 2.5A, VDS = 100V (Figure 11) 3.5 - S
VDD = 500V, I = 3.9A, RGS = 9.1Ω, RL = 120Ω

VGS = 10V

-30ns

-50ns

- 170 ns

-50ns

= 3.9A, VDS = 800V, VGS = 10V (Figure 13) - 120 nC

- 0.83

Free Air Operation - 40

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature.

4. VDD = 25V, starting TJ = 25oC, L = 640µH, RG = 25Ω, peak IAS = 9.2A (Figure 3).

4-366

ISD = 4.3A (Figure 12) - 1.8 V
ISD = 3.9A, dlSD/dt = 100A/µs - 1000 ns