Intersil IRFP9150 Datasheet

IRFP9150

Data Sheet August 1999

25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET

This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switchingconvertors,motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.

The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.

Formerly developmental type TA49230.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP9150 TO-247 IRFP9150

NOTE: When ordering, use the entire part number.

File Number

Features

• 25A, 100V

DS(ON)

= 0.150Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

2293.4

Packaging

DRAIN

(FLANGE)

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

4-63

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFP9150

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP9150 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 10kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

-100 V

-100 V

-25

-18

-100 A
±20 V
150 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

as

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

1300 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2)

I

D(ON) VDS > I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = -250µA (Figure 10) 1 - - V

= VGS, ID = -250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TC= 125oC - - 250 µA

DSS

x r

DS(ON)MAX,VGS

= 10V -25 - - A

VGS = ±20V - - ±100 nA

= -10V, ID = -10A (Figure 8, 9) - 0.090 0.150 Ω
VDS≤ -10V, ID = -12.5A (Figure 12) 4 10 - S

= -50V, ID≈ -25A, RG = 6.8Ω, RL = 2Ω
(Figures 17 and 18) MOSFET switching times are es­sentially independent of operating temperature).

- 16 24 ns

- 110 160 ns

- 65 100 ns

-4670ns

= -10V, ID = -25A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g(REF)

DSS

(Gate Charge is Essentially Independent Of Operat­ing Temperature)

- 82 120 nC

-14-nC

-42-nC

VGS = 0V, VDS = -25V, f = 1.0MHz
(Figure 11)

- 2400 - pF

- 850 - pF

- 400 - pF

Measured From the Drain
Lead, 6mm (0.25in) From
the Package to the Center
of the Die

MeasuredFromthe Source
Pin, 6mm (0.25in) From
Header to the Source
Bonding Pad

Modified MOSFET
Symbol Showing the In­ternal Device Induc­tances

D

L

D

G

L

S

S

- 5.0 - nH

-13-nH

- - 0.83oC/W

Free Air Operation - - 30

0

C/W

4-64

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

SD

I

SDM

IRFP9150

Modified MOSFET Symbol
Showing the Integral Re­verse P-N Junction Diode

D

- - -25 A

- - -100 A

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

TJ = 25oC, ISD = -25A, VGS = 0V (Figure 13) - -0.9 -1.5 V

SD

TJ = 25oC, ISD = -25A, dISD/dt = 100A/µs - 150 300 ns

rr

TJ = 25oC, ISD = -25A, dISD/dt = 100A/µs 0.3 0.7 1.5 µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3

4. VDD= 25V, start TJ= 25oC, L = 3.2mH, RG= 25Ω, peak IAS= 25A (Figures 15, 16).

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

-30

-25

-20

-15

-10

, DRAIN CURRENT (A)

D

I

-5

0

25 50 75 100 125 150

TC, CASE TEMPERATURE(oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

10

DUTY CYCLE IN DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

1

0.01

0.10

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

NORMALIZED EFFECTIVE TRANSIENT

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-65

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

, SQUARE WAVE PULSE DURATION (s)

t

1

-2

10

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t

TJ= PDMx Z

-1

10

t

1

t

2

1/t2

x R

θJC

+ T

C

10

θJC

1