Intersil IRFP9140 Datasheet

IRFP9140

Data Sheet July 1999

19A, 100V, 0.200 Ohm, P-Channel Power
MOSFET

This is an advanced power MOSFET designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon gate power field effect transistor
designed for applications such as switching regulators,
switchingconvertors,motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.

Formerly developmental type TA17521.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP9140 TO-247 IRFP9140

NOTE: When ordering, use the entire part number.

File Number

Features

• 19A, 100V

DS(ON)

= 0.200Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

2292.4

Packaging

DRAIN

(FLANGE)

JEDEC STYLE T0-247

SOURCE

DRAIN

GATE

4-57

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFP9140

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP9140 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
DM
DM

GS

D

-100 V

-100 V

-19

-12

-76 A
±20 V
150 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

as

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

960 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2)

I

D(ON) VDS > I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = -250µA, (Figure 10) -100 - - V

= VGS, ID = -250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ= 125oC - - 250 µA

DSS

x r

DS(ON) MAX,VGS

= -10V -19 - - A

VGS = ±20V - - ±100 nA

= -10V, ID = -10A, (Figures 8, 9) - 0.14 0.20 Ω
VDS≤ -50V, ID = -10A, (Figure 12) 5.3 7.9 - S
VDD = -50V, ID≈ -19A, RG = 9.1Ω, RL = 2.5Ω,

VGS = -10V, (Figures 17, 18)
MOSFET Switching Times Are Essentially Indepen­dent of Operating Temperature

- 16 20 ns

- 65 100 ns

-4770ns

-2870ns

= -10V, ID = -19A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

G(REF)

DSS,

Gate Charge is Essentially Independent of Operating
Temperature

-3755nC

- 8.7 - nC

-22- nC

VGS = 0V, VDS = -25V, f = 1.0MHz, (Figure 11) - 1200 - pF

- 570 - pF

- 160 - pF

MeasuredBetweenContact
Screw on Header That Is
Closer to Source and Gate
Pins and Center of Die

Measured From the Source
Pin, 6mm (0.25in) From
Header and Source Bond­ing Pad

Modified MOSFET
Symbol Showing the In­ternal Device Induc­tances

D

L

D

G

L

S

S

- 5.0 - nH

-13- nH

- - 0.83oC/W

Free Air Operation - - 30

0

C/W

4-58

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

SD

I

SDM

IRFP9140

Modified MOSFET Symbol
Showing the Integral Re­verse P-N Junction
Diode

D

- - -19 A

- - -76 A

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

TJ = 25oC, ISD = -19A, VGS = 0V, (Figure 13) - - -1.5 V

SD

TJ = 25oC, ISD = -18A, dISD/dt = 100A/µs - 210 - ns

rr

TJ = 25oC, ISD = -18A, dISD/dt = 100A/µs - 2.0 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, start TJ= 25oC, L = 4.2mH, RG= 25Ω, peak IAS= 19A. See Figures 15, 16.

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

25 50 75 100 125 150

T

, CASE TEMPERATURE(oC)

C

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.05

0.2

0.1

0.1

0.05

0.02

-2

10

THERMAL IMPEDANCE

-3

10

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t

, RECTANGULAR PULSE DURATION (s)

1

NORMALIZED

θJC,

Z

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

4-59

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

θJC

2

1/t2

x R

θJC

NOTES:
DUTY FACTOR: D = t
PEAK TJ= PDM x Z

-2

10

0.1 1 10

+ T

C