Intersil IRFP460 Datasheet

IRFP460

Data Sheet July 1999

20A, 500V, 0.270 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17465.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP460 TO-247 IRFP460

NOTE: When ordering, use the entire part number.

File Number

Features

• 20A, 500V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.270Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

2291.3

Packaging

S

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN
(TAB)

4-359

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFP460

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP460 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

500 V
500 V

20
12

80 A
±20 V
250 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

960 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate-Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 500 - - V

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V 20 - - A

VGS = ±20V - - ±100 nA

= 11A, VGS = 10V (Figures 8, 9) - 0.24 0.27 Ω
VDS≥ 50V, IDS > 11A (Figure 12) 13 19 - S
VDD = 250V, ID = 21A, RGS = 4.3Ω, RD = 12Ω,

VGS=10VMOSFET SwitchingTimesare Essentially
Independent of Operating Temperature

-2335ns

- 81 120 ns

- 85 130 ns

-6598ns

= 10V, ID = 21A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figure 14). Gate Charge is

G(REF)

DSS,

Essentially Independent of OperatingTemperature

- 120 190 nC

-18-nC

-62-nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 4100 - pF

- 480 - pF

-84-pF

Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die

Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

G

D

L

D

L

S

S

- 5.0 - nH

-13-nH

- - 0.50oC/W

Free Air Operation - - 30

o

C/W

4-360

IRFP460

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 4.3mH, RGS= 25Ω, Peak IAS = 20A.

Modified MOSFET
Symbol Showing the

D

Integral Reverse P-N
Junction Rectifier

TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13) - - 1.8 V

SD

TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 280 580 1200 ns

rr

TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 3.8 8.1 18 µC

RR

G

S

- - 20 A

- - 80 A

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

C/W)

o

0.5

0.1

0.2

0.1

0.05

0.02

-2

10

0.01

, THERMAL IMPEDANCE (

θJC

Z

-3

10

10

SINGLE PULSE

-5

-4

10

10

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

25 75 125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t1, RECTANGULAR PULSE DURATION (S)

-2

10

50 100

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

t

1

t

θJC

1/t2

x R

2

θJC

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0.1 1 10

+ T

150

C

4-361

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE