Intersil IRFP247, IRFP246, IRFP245, IRFP244 Datasheet

July 1998

Semiconductor

IRFP244, IRFP245,

IRFP246, IRFP247

15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,

N-Channel Power MOSFETs

Features

• 15A and 14A, 275V and 250V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275V, 250VDC Rated, 120VAC Line System Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.28Ω and 0.34Ω

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRFP244 TO-247 IRFP244
IRFP245 TO-247 IRFP245
IRFP246 TO-247 IRFP246

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17423.

Symbol

D

G

S

IRFP247 TO-247 IRFP247

NOTE: When ordering, include the entire part number.

Packaging

DRAIN

(FLANGE)

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 2211.2

IRFP244, IRFP245, IRFP246, IRFP247

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFP244 IRFP245 IRFP246 IRFP247 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . .V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

250 250 275 275 V
250 250 275 275 V

15 14 15 14 A

9.7 8.8 9.7 8.8 A
60 56 60 56 A

±20 ±20 ±20 ±20 V
150 150 150 150 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 1.2 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

550 550 550 550 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSVGS

= 0V, ID = 250µA (Figure 10)

IRFP244, IRFP245 250 - - V

IRFP246, IRFP247 275 - - V
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

DSS

, VGS = 0V

- - 250 µA

TJ = 125oC

On-State Drain Current (Note 2) I

D(ON)

IRFP244, IRFP246 15 - - A

VDS> I

D(ON) xrDS(ON)MAX

(Figure 7)

, VGS = 10V

IRFP245, IRFP247 14 - - A
Gate to Source Leakage I
Drain to Source On Resistance (Note 2) r

GSS

DS(ON)VGS

VGS = ±20V - - ±100 nA

= 10V, ID = 10A (Figures 8, 9)

IRFP244, IRFP246 - 0.20 0.28 Ω

IRFP245, IRFP247 - 0.24 0.34 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

VDS≥ 50V, ID = 10A (Figure 12) 6.7 11 - S

fs

VDD= 125V, ID≈ 15A, RG = 9.1Ω, VGS = 10V,

-1624ns

RL = 8Ω (Figures 17, 18) MOSFET Switching

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

Times are Essentially Independent of

r

Operating Temperature

f

= 10V, ID = 15A, VDS = 0.8 x Rated

BV

DSS

, I

= 1.5mA (Figures 14, 19, 20)

G(REF)

- 67 100 ns

-5380ns

-4974ns

-3959nC

Gate charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Operating Temperature

gs

gd

- 6.6 - nC

-20- nC

5-2

IRFP244, IRFP245, IRFP246, IRFP247

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS

OSS

RSS

Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

θJC

θJA

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

VGS = 0V, VDS = 25V, f = 1.0MHz

- 1300 - pF

(Figure 11)

- 320 - pF

-69- pF

Measured fRom the

D

Drain Lead, 6mm
(0.25in) From Pack­age to the Center of
Die

Measured from The

S

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

- 5.0 - nH

- 12.5 - nH
Source Lead, 6mm
(0.25in) from the
Header to the Source
Bonding Pad

G

L

S

S

- - 0.83oC/W
Free Air Operation - - 30

o

C/W

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

SD

I

SDM

Modified MOSFET
Symbol Showing the
Integral Reverse

D

- - 15 A

- - 60 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 15A, VGS = 0V (Figure 13) - - 1.8 V

SD

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns

rr

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 4.0µH, RG = 25Ω, peak IAS = 15A. See Figures 15, 16.

5-3

IRFP244, IRFP245, IRFP246, IRFP247

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

T

, CASE TEMPERATURE (oC)

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

10

1

0.5

0.2

0.1

0.1

0.05

0.02

, NORMALIZED

0.01

θJC

-2

Z

10

THERMAL IMPEDANCE

-3

10

-5

10

SINGLE PULSE

-4

10

-3

10

, RECTANGULAR PULSE DURATION (s)

t

1

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

IRFP245, IRFP247

50 75 10025 150

TC, CASE TEMPERATURE (oC)

IRFP244, IRFP246

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

t

2

2

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ= PDM x Z

-2

10

0.1 1 10

θJC

2

x R

θJC

+ T

C

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

3

10

2

IRFP244/246

10

IRFP245/247
IRFP244/246

10

IRFP245/247

, DRAIN CURRENT (A)

1

D

I

T

= 25oC

C

TJ = MAX RATED
SINGLE PULSE

0.1
110

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS
REGION IS LIMITED
BY r

DS(ON)

IRFP244,
IRFP245

2

10

10µs

100µs

1ms

10ms

DC

IRFP246,
IRFP247

3

10

25

VGS = 10V

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 1000 125

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs

VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V
VGS = 4.0V

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5-4

IRFP244, IRFP245, IRFP246, IRFP247

Typical Performance Curves

25

PULSE DURATION = 80µs

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

2468010

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.5

PULSE DURATION = 80µs

2.0

1.5

VGS = 10V

VGS = 6.0V

VGS = 5.5V

VGS = 4.5V
VGS = 4.0V

VGS = 10V

Unless Otherwise Specified (Continued)

100

10

VGS = 5.0V

1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

0.1

I

0246810

3.0

2.4

1.8

≥ 50V

V

DS

PULSE DURATION = 80µs

T

= 150oC

J

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 10A
VGS = 10V

TJ = 25oC

1.0

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.5

DS(ON)

r

0

15 30 45075

ID, DRAIN CURRENT (A)

VGS = 20V

60

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESIST ANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

0-40 40 80 120 140

-20 20 100 160
, JUNCTION TEMPERATURE (oC)

T

J

60-60

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0

0 60 120 160

-20-40 20 40 100 140
, JUNCTION TEMPERATURE (oC)

T

J

80-60

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

3000

2400

1800

1200

C, CAPACITANCE (pF)

600

0

1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

C

OSS

C

RSS

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

C

≈ C

OSS

GD

DS

+ C

GD

GD

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5-5

IRFP244, IRFP245, IRFP246, IRFP247

Typical Performance Curves

15

V

≥ 50V

DS

PULSE DURATION = 80µs

12

9

6

, TRANSCONDUCTANCE (S)

3

fs

g

0

5101520025

ID, DRAIN CURRENT (A)

Unless Otherwise Specified (Continued)

100

TJ = 25oC

TJ = 150oC

, SOURCE TO DRAIN CURRENT (A)

SD

I

0.1

10

TJ = 150oC

1

0 0.4 0.8 1.2 1.6 2.0

VSD, SOURCE TO DRAIN VOLTAGE (V)

TJ = 25oC

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 15A

16

VDS = 50V

12

VDS = 125V

= 200V

V

8

4

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

12 24 36 48060

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

DS

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5-6

IRFP244, IRFP245, IRFP246, IRFP247

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

V

R

L

+

V

R

G

DD

-

DUT

V

GS

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

10%

90%

G

I

0

g(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT

D

S

CURRENT

I

D

SAMPLING

DUT

V

DS

0

I

V

DS

G(REF)

0

FIGURE 20. GATE CHARGE WAVEFORMS

5-7