Intersil IRFP247, IRFP246, IRFP245, IRFP244 Datasheet
July 1998
Semiconductor
IRFP244, IRFP245,
IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
Features
• 15A and 14A, 275V and 250V
•r
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250VDC Rated, 120VAC Line System Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.28Ω and 0.34Ω
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
IRFP244 TO-247 IRFP244
IRFP245 TO-247 IRFP245
IRFP246 TO-247 IRFP246
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17423.
Symbol
D
G
S
IRFP247 TO-247 IRFP247
NOTE: When ordering, include the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 2211.2
IRFP244, IRFP245, IRFP246, IRFP247
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFP244 IRFP245 IRFP246 IRFP247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
D
DM
GS
D
250 250 275 275 V
250 250 275 275 V
15 14 15 14 A
9.7 8.8 9.7 8.8 A
60 56 60 56 A
±20 ±20 ±20 ±20 V
150 150 150 150 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 1.2 1.2 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . TJ, T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
550 550 550 550 mJ
-55 to 150 -55 to 150 -55 to 150 -55 to 150
300
260
300
260
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSVGS
= 0V, ID = 250µA (Figure 10)
IRFP244, IRFP245 250 - - V
IRFP246, IRFP247 275 - - V
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
DSS
, VGS = 0V
- - 250 µA
TJ = 125oC
On-State Drain Current (Note 2) I
D(ON)
IRFP244, IRFP246 15 - - A
VDS> I
D(ON) xrDS(ON)MAX
(Figure 7)
, VGS = 10V
IRFP245, IRFP247 14 - - A
Gate to Source Leakage I
Drain to Source On Resistance (Note 2) r
GSS
DS(ON)VGS
VGS = ±20V - - ±100 nA
= 10V, ID = 10A (Figures 8, 9)
IRFP244, IRFP246 - 0.20 0.28 Ω
IRFP245, IRFP247 - 0.24 0.34 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
VDS≥ 50V, ID = 10A (Figure 12) 6.7 11 - S
fs
VDD= 125V, ID≈ 15A, RG = 9.1Ω, VGS = 10V,
-1624ns
RL = 8Ω (Figures 17, 18) MOSFET Switching
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Times are Essentially Independent of
r
Operating Temperature
f
= 10V, ID = 15A, VDS = 0.8 x Rated
BV
DSS
, I
= 1.5mA (Figures 14, 19, 20)
G(REF)
- 67 100 ns
-5380ns
-4974ns
-3959nC
Gate charge is Essentially Independent of
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Operating Temperature
gs
gd
- 6.6 - nC
-20- nC
5-2
IRFP244, IRFP245, IRFP246, IRFP247
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
ISS
OSS
RSS
Internal Drain Inductance L
Internal Source Inductance L
Junction to Case R
Junction to Ambient R
θJC
θJA
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VGS = 0V, VDS = 25V, f = 1.0MHz
- 1300 - pF
(Figure 11)
- 320 - pF
-69- pF
Measured fRom the
D
Drain Lead, 6mm
(0.25in) From Package to the Center of
Die
Measured from The
S
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
- 5.0 - nH
- 12.5 - nH
Source Lead, 6mm
(0.25in) from the
Header to the Source
Bonding Pad
G
L
S
S
- - 0.83oC/W
Free Air Operation - - 30
o
C/W
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 3)
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
SD
I
SDM
Modified MOSFET
Symbol Showing the
Integral Reverse
D
- - 15 A
- - 60 A
P-N Junction Diode
G
S
TJ = 25oC, ISD= 15A, VGS = 0V (Figure 13) - - 1.8 V
SD
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns
rr
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.0µH, RG = 25Ω, peak IAS = 15A. See Figures 15, 16.
5-3
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