Intersil IRFF9220 Datasheet

IRFF9220

Data Sheet July 1998 File Number 2288.2

-2.5A, -200V, 1.5 Ohm, P-Channel Power
MOSFETs

These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. The y are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators ,
switchingconverters,motor drivers, relay drivers and drivers for
high power bipolar switching transistors requiring high speed
and low gate drivepower.Thesetypescan be operated directly
from integrated circuits.

Formerly develpomental type TA17502.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFF9220 TO-205AF IRFF9220

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-205AF

Features

• -2.5A, -200V

DS(ON)

= 1.5Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

DRAIN
(CASE)

SOURCE

GATE

4-107

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFF9220

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFF9220 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

DM

GS

D

-200 V

-200 V

-2.5 A

-10 A

±20 V

20 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

290 mJ

-55 to 150

300

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t

Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance

R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC
θJA

= -250µA, VGS = 0V, (Figure 10) -200 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 125oC - - -250 µA

DSS

x r

DS(ON)MAX

, VGS = -10V -2.5 - - A

VGS = ±20V - - ±100 nA

= 1.5A, VGS = -10V, (Figures 8, 9) - 1.0 1.5 Ω

VDS > I

D(ON)

x r

DS(ON)MAX

, ID = 1.5A,

1 1.8 - S

(Figure 12)

= 0.5 x Rated BV
RL = 38.5Ω for BV
RL = 28.5Ω for BV
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature

= -10V, ID = -2.5A, VDS = 0.8 x Rated BV
I

= -1.5mA, (Figures 14, 19, 20)

G(REF)

Gate Charge is Essentially Independent of
Operating Temperature

, ID = -2.5A, RGS= 9.1Ω,

DSS

= -200V

DSS

= -150V

DSS

DSS

-1540ns

-2550ns

- 80 120 ns

-5075ns

-1622nC

-9-nC

-7-nC

VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 350 - pF

- 100 - pF

-30- pF

Measured From the Drain
Lead, 5mm (0.2in) From
Header To Center of Die

MeasuredFromthe Source
Lead, 5mm (0.2in) From
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the In­ternal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

-15- nH

- - 6.25oC/W

Typical Socket Mount - - 175

o

C/W

Junction to Ambient

4-108

IRFF9220

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 69.6mH, RG= 25Ω, peak IAS= 2.5A (Figures 15, 16).

Modified MOSFET Symbol

SD

Showing the Integral Re-

D

verse P-N Junction Rectifier

G

S

TC = 25oC, ISD = -2.5A, VGS = 0V, (Figure 13) - - -1.5 V

SD

TJ = 150oC, ISD = -2.5A, dISD/dt = 100A/µs - 300 - ns

rr

TJ = 150oC, ISD = -2.5A, dISD/dt = 100A/µs - 1.9 - µC

RR

- - -2.5 A

- - -10 A

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1.0

0.5

0.2

TRANSIENT THERMAL IMPEDANCE

0.01

0.1

0.05

0.02

0.01

-5

10

10

SINGLE PULSE

-4

-3

10

t1, RECTANGULAR PULSE DURATION (s)

0.1

NORMALIZED

θJC,

Z

-2.5

-2.0

-1.5

-1.0

, DRAIN CURRENT (A)

D

I

-0.5

0

25 75 125

50 100

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

θJC

1/t2

2

x R

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1

θJC

+ T

150

C

10

4-109

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE