Intersil IRFF330 Datasheet

IRFF330

Data Sheet March 1999

3.5A, 400V, 1.000 Ohm, N-Channel
Power MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17414.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFF330 TO-205AF IRFF330

NOTE: When ordering, include the entire part number.

File Number 1893.3

Features

• 3.5A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.000Ω

Components to PC Boards”

Symbol

D

G

Packaging

DRAIN
(CASE)

S

JEDEC TO-205AF

SOURCE

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFF330

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFF330 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

DM

GS

D

D

400 V
400 V

3.5 A
14 A

±20 V

25 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

-55 to 150

L

300 mJ

300
260

o

o
o

C

C
C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Forward I
Drainto SourceOn Resistance(Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX,VGS

= 10V (Figure 7) 3.5 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 2.0A (Figures 8, 9) - 0.8 1.000 Ω
VDS= 10V, ID = 3.3A (Figure 12) 2.9 3.5 - S

≈ 3.5A, RG = 9.1Ω, VGS = 10V, RL = 49Ω
VDD = 175V (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature

- - 30 ns

- - 35 ns

- - 55 ns

- - 35 ns

= 10V, ID = 3.5A, I
VDS = 0.8V x Rated BV
Gate Charge is Essentially Independent of
Operating Temperature

= 1.5mA,

G(REF)

(Figures 14, 19, 20)

DSS

-1830nC

-11 - nC

- 7.0 - nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 700 - pF

- 150 - pF

-40 - pF

MeasuredfromtheDrain
Lead, 5mm (0.2in) from
header to Center of Die

Measured from the
Source Lead, 5mm
(0.2in) from Header to
Source Bonding Pad

Free Air Operation - - 175

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

-15 - nH

- - 5.0

o
o

C/W
C/W

2

IRFF330

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, start TJ = 25oC, L = 42.85mH, RG = 25Ω, peak IAS = 3.5A (Figures 14,15).

Modified MOSFET
Symbol Showing the

D

Integral Reverse P-N
Junction Rectifier.

TJ = 25oC, ISD= 3.5A, VGS = 0V (Figure 13) - - 1.6 V

SD

TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs - 600 - ns

rr

TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs - 4.0 - µC

RR

G

S

- - 3.5 A

- - 14 A

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1.0

0.5

0.2

0.1

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01
10

0.05

0.02

0.01
SINGLE PULSE

-5

-4

10

-3

10

T

, RECTANGULAR PULSE DURATION (LC)

1

4

3

2

, DRAIN CURRENT (A)

1

D

I

0

50 75 10025 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
TJ= PDM x Z

-2

10

0.1 1 10

θJC

(t) x R

1/t2

125

θJC

+ T

C

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

3