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IRFF320
Data Sheet March 1999
2.5A, 400V, 1.800 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17404.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFF320 TO-205AF IRFF320
NOTE: When ordering, include the entire part number.
File Number 1890.4
Features
• 2.5A, 400V
•r
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 1.800Ω
Components to PC Boards”
Symbol
D
G
Packaging
DRAIN
(CASE)
S
JEDEC TO-205AF
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
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IRFF320
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFF320 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
400 V
400 V
2.5 A
10 A
20 V
20 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
AS
STG
100 mJ
-55 to 150
o
C
Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Leakage Current I
Zero-Gate Voltage Drain Current I
On-State Drain Current (Note 2) I
Gate to Threshold Voltage V
Drain to Source On Resistance (Note 2) r
D(ON)VDS
GS(TH)VGS
DS(ON)VGS
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
DSSVGS
GSS
DSS
fs
r
f
gs
gd
ISS
OSS
RSS
D
S
= 0V, ID = 250µA (Figure 10) 400 - - V
VGS = ±20V - - ±100 nA
VDS = Rated BV
VDS = 0.8 x Rated BV
> I
D(ON)
, VGS = 0V - - 25 µA
DSS
, VGS = 0V, TJ = 125oC - - 250 µA
DSS
x r
DS(ON)MAX
, VGS = 10V (Figure 7) 2.5 - - A
= VDS, ID = 250µA 2.0 - 4.0 V
= 10V, ID = 1.25A (Figures 8, 9) - 1.5 1.800 Ω
VDS≥ 10V, ID = 2.0A (Figure 12) 1.7 2.2 - S
VDD = 0.5 x Rated BV
VGS = 10V, RL = 78.2Ω For V
RL = 68.2Ω For V
DSS
MOSFET Switching Times are Essentially
Independent of Operating Temperature
= 10V, ID = 2.5A, VDS = 0.8 x Rated BV
I
= 1.5mA (Figures 14, 19, 20) Gate Charge is
G(REF)
Essentially Independent of Operating Temperature
, ID≈ 2.5A, RG = 9.1Ω,
DSS
DSS
= 200V,
= 175V (Figures 17, 18),
DSS
-2040ns
-2550ns
- 50 100 ns
-2550ns
,
-1215nC
- 6.0 - nC
- 6.0 - nC
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 450 - pF
- 100 - pF
-20-pF
Measured from the Drain
Lead, 5mm (0.2in) from
Header to Center of Die
Measured from the
Source Lead, 5mm
(0.2in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
L
D
G
L
S
S
- 5.0 - nH
-15-nH
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
2
θJC
Free Air Operation - - 175
θJA
- - 6.25oC/W
o
C/W
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Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 3)
I
SDM
SD
IRFF320
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
D
G
S
- - 10 A
- - 2.5 A
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
TJ = 25oC, ISD= 2.5A, VGS = 0V (Figure 13) - - 1.6 V
SD
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs - 450 - ns
rr
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs - 3.1 - µC
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 40V, starting TJ = 25oC, L = 29.09mH, RG = 50Ω, peak IAS = 2.5A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
2.5
2.0
1.5
1.0
, DRAIN CURRENT (A)
D
I
0.5
0
50 75 10025 150
TC, CASE TEMPERATURE (oC)
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
0.5
0.2
0.1
1.0
, TRANSIENT
θJC
Z
THERMAL IMPEDANCE
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
-4
10
-3
10
t
, RECTANGULAR PULSE DURATION (s)
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
PEAK T
= PDM x Z
J
-2
10
0.1 1 10
θJC
1/t2
+ T
C