Intersil IRFF320 Datasheet

IRFF320

Data Sheet March 1999

2.5A, 400V, 1.800 Ohm, N-Channel
Power MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17404.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFF320 TO-205AF IRFF320

NOTE: When ordering, include the entire part number.

File Number 1890.4

Features

• 2.5A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.800Ω

Components to PC Boards”

Symbol

D

G

Packaging

DRAIN
(CASE)

S

JEDEC TO-205AF

SOURCE

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFF320

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFF320 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

DM

GS

D

400 V
400 V

2.5 A
10 A

20 V

20 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Junction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

AS

STG

100 mJ

-55 to 150

o

C

Temperature Range

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Leakage Current I
Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I
Gate to Threshold Voltage V
Drain to Source On Resistance (Note 2) r

D(ON)VDS
GS(TH)VGS

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

DSSVGS
GSS
DSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

= 0V, ID = 250µA (Figure 10) 400 - - V
VGS = ±20V - - ±100 nA
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V (Figure 7) 2.5 - - A
= VDS, ID = 250µA 2.0 - 4.0 V
= 10V, ID = 1.25A (Figures 8, 9) - 1.5 1.800 Ω

VDS≥ 10V, ID = 2.0A (Figure 12) 1.7 2.2 - S
VDD = 0.5 x Rated BV

VGS = 10V, RL = 78.2Ω For V
RL = 68.2Ω For V

DSS

MOSFET Switching Times are Essentially
Independent of Operating Temperature

= 10V, ID = 2.5A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figures 14, 19, 20) Gate Charge is

G(REF)

Essentially Independent of Operating Temperature

, ID≈ 2.5A, RG = 9.1Ω,

DSS

DSS

= 200V,

= 175V (Figures 17, 18),

DSS

-2040ns

-2550ns

- 50 100 ns

-2550ns

,

-1215nC

- 6.0 - nC

- 6.0 - nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 450 - pF

- 100 - pF

-20-pF

Measured from the Drain
Lead, 5mm (0.2in) from
Header to Center of Die

Measured from the
Source Lead, 5mm
(0.2in) from Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

-15-nH

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

2

θJC

Free Air Operation - - 175

θJA

- - 6.25oC/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

I

SDM

SD

IRFF320

Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier

D

G

S

- - 10 A

- - 2.5 A

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

TJ = 25oC, ISD= 2.5A, VGS = 0V (Figure 13) - - 1.6 V

SD

TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs - 450 - ns

rr

TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs - 3.1 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 40V, starting TJ = 25oC, L = 29.09mH, RG = 50Ω, peak IAS = 2.5A (Figures 15, 16).

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

0.5

0.2

0.1

1.0

, TRANSIENT

θJC

Z

THERMAL IMPEDANCE

0.1

0.05

0.02

0.01
SINGLE PULSE

-5

10

-4

10

-3

10

t

, RECTANGULAR PULSE DURATION (s)

1

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK T

= PDM x Z

J

-2

10

0.1 1 10

θJC

1/t2

+ T

C