Intersil IRFD9120 Datasheet

IRFD9120

Data Sheet July 1999

1.0A, 100V, 0.6 Ohm, P-Channel Power
MOSFET

This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field
effecttransistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.

Formerly developmental type TA17501.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFD9120 HEXDIP IRFD9120

NOTE: When ordering, use the entire part number.

File Number

Features

• 1.0A, 100V

DS(ON)

= 0.6Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

2285.3

Packaging

HEXDIP

DRAIN

GATE

SOURCE

4-45

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFD9120

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFD9120 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

-100 V

-100 V

-1.0 A

-8.0 A
±20 V

1.0 W

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.008 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

370 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJA

= -250µA, VGS = 0V, (Figure 9) -100 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 125oC - - -250 µA

DSS

x r

DS(ON) MAX

, VGS = -10V -1.0 - - A

VGS = ±20V - - ±500 nA

= -0.8A, VGS = -10V, (Figures 7, 8) - 0.5 0.6 Ω
VDS < 50V, ID = -0.8A (Figure 11) 0.8 1.2 - S
VDD = 0.5 x Rated BV

RG = 9.1Ω, VGS = -10V, (Figures 16, 17)
RL = 50Ω for VDD= -50V
MOSFET Switching Times are Essentially Indepen­dent of Operating Temperature

= -10V, ID = -1.0A, VDS = 0.8 x Rated BV

, ID = -1.0A,

DSS

DSS

-2550 ns

- 50 100 ns

- 50 100 ns

- 50 100 ns

-1620nC
(Figures 13, 18, 19)
Gate ChargeisEssentiallyIndependent of Operating
Temperature

-9- nC

-7- nC
VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10) - 300 - pF

- 200 - pF

-50- pF
Measured From the Drain

Lead,2.0mm(0.08in) From
Header to Center of Die

MeasuredFrom the Source
Lead,2.0mm(0.08in) From
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the In­ternal Devices
Inductances

D

L

D

G

L

S

S

- 4.0 - nH

- 6.0 - nH

Typical Socket Mount - - 120oC/W

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