Intersil IRFD310 Datasheet

IRFD310

Data Sheet July 1999

0.4A, 400V, 3.600 Ohm, N-Channel
Power MOSFET

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolarswitching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA17444.

Ordering Information

PART NUMBER PACKAGE BRAND

IRFD310 HEXDIP IRFD310

NOTE: When ordering, use the entire part number.

File Number

Features

• 0.4A, 400V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3.600Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

2324.4

Packaging

S

HEXDIP

DRAIN

GATE

SOURCE

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRFD310

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRFD310 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

DM

GS

D

400 V
400 V

0.4 A

1.6 A

±20 V

1.0 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.008 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

45 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJA

= 250µA, VGS = 0V (Figure 9) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TC = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V 0.4 - - A

VGS = ±20V - - ±100 nA

= 0.2A, VGS = 10V (Figures 7, 8) - 3.3 3.6 Ω
VDS≥ 10V, ID = 1.2A (Figure 11) 1.0 1.2 - S
VDD = 0.5 x Rated BV

VGS = 10V, RL = 495Ω for V
MOSFET Switching Times are Essentially
Independent of Operating Temperature

, ID≈ 0.4A, RG = 9.1Ω,

DSS

DSS

= 200V

- 3.0 10 ns

-1020ns

- 5.0 10 ns

- 8.0 15 ns

= 10V, ID = 0.4A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figure 13)

g(REF)

DSS

GateCharge is EssentiallyIndependentof Operating
Temperature

- 6.0 7.5 nC

- 3.0 - nC

- 3.0 - nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 135 - pF

-35-pF

- 8.0 - pF

Measured From Drain
Lead, 2.0mm (0.08in) From
Package to Center of Die

MeasuredFromthe Source
Lead, 2.0mm (0.08in) from
Package to Source
Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 4.0 - nH

- 6.0 - nH

Free Air Operation - - 120oC/W

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