Intersil IRFD1Z3, IRFD1Z2, IRFD1Z1, IRFD1Z0 Datasheet
July 1998
Semiconductor
IRFD1Z0, IRFD1Z1,
IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,
N-Channel Power MOSFETs
Features
• 0.4A and 0.5A, 60V and 100V
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 2.4Ω and 3.2Ω
DS(ON)
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
IRFD1Z0 HEXDIP IRFD1Z0
IRFD1Z1 HEXDIP IRFD1Z1
IRFD1Z2 HEXDIP IRFD1Z2
IRFD1Z3 HEXDIP IRFD1Z3
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
Symbol
D
G
S
NOTE: When ordering, use the entire part number.
Packaging
HEXDIP
DRAIN
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 2313.1
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFD1Z0 IRFD1Z1 IRFD1Z2 IRFD1Z3 UNITS
Drain to Source (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . P
DS
DM
GS
100 60 100 60 V
100 60 100 60 V
0.5 0.5 0.4 0.4 A
D
4.0 4.0 3.2 3.2 A
±20 ±20 ±20 ±20 V
1.0 1.0 1.0 1.0 W
D
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . 0.008 0.008 0.008 0.008 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . TJ,T
-55 to 150 -55 to 150 -55 to 150 -55 to 150
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
pkg
300
L
260
300
260
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V (See Figure 9)
IRFD1Z0, IRFD1Z2 100 - - V
IRFD1Z1, IRFD1Z3 60 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
, VGS = 0V,
DSS
- - 250 µA
TC = 125oC
On-State Drain Current (Note 2) I
D(ON)
IRFD1Z0, IRFD1Z1 0.5 - - A
VDS > I
D(ON)
(See Figure 6)
x r
DS(ON)MAX
, VGS = 10V
IRFD1Z2, IRFD1Z3 0.4 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
GSS
DS(ON)ID
VGS = ±20V - - ±100 nA
= 0.25A, VGS = 10V (See Figures 7, 8)
IRFD1Z0, IRFD1Z1 - 2.2 2.4 Ω
IRFD1Z2, IRFD1Z3 - 2.8 3.2 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
OSS
RSS
VDS > I
fs
VDD≅ 0.5 x Rated BV
D(ON)
x r
DS(ON)MAX
, ID = 0.25A 0.25 0.35 - S
, ID = 0.25A,
DSS
RG = 50Ω (Figures 14, 15, 16)
r
RL = 198Ω for BV
RL = 118Ω for BV
DSS
DSS
= 100V
= 60V
MOSFET Switching Times are Essentially Independent of Operating Temperature
f
= 10V, ID = 1.2A, VDS = 0.8 x Rated BV
(Figures 13, 16, 17) Gate Charge is Essentially
Independent of Operating Temperature
gs
gd
VGS = 0V, VDS = 25V, f = 1MHz
ISS
(Figure 10)
DSS
-1020ns
-1525ns
-1525ns
-1020ns
- 2.0 3.0 nC
- 1.0 - nC
- 1.0 - nC
-50- pF
-20- pF
-5-pF
5-2
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