Intersil IRFD120 Datasheet
IRFD120
Data Sheet July 1999
1.3A, 100V, 0.300 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effecttransistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17401.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFD120 HEXDIP IRFD120
NOTE: When ordering, use the entire part number.
File Number
Features
• 1.3A, 100V
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.300Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
2315.3
Packaging
S
HEXDIP
DRAIN
GATE
SOURCE
4-275
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
IRFD120
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFD120 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
100 V
100 V
1.3 A
5.2 A
±20 V
1.0 W
Linear Derating Factor (See Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.008 W/oC
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
36 mJ
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
On-State Drain Current (Note 2) I
D(ON)
Gate Source Leakage I
Drain Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
fs
r
f
gs
gd
ISS
OSS
RSS
D
S
θJA
= 250µA, VGS = 0V (Figure 9) 100 - - V
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I
D(ON)
, VGS = 0V - - 25 µA
DSS
, VGS = 0V, TJ = 125oC - - 250 µA
DSS
x r
Max, VGS = 10V 1.3 - - A
DS(ON)
VGS = ±20V - - ±500 nA
= 0.6A, VGS = 10V (Figures 7, 8) - 0.25 0.30 Ω
VDS > I
VDD = 0.5 x Rated BV
VGS = 10V, RG = 9.1Ω
RL = 38.5Ω for VDD = 50V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
= 10V, ID = 1.3A, VDS = 0.8 x Rated BV
I
g(REF)
Gate Charge is Essentially Independent of Operating
Temperature
x r
D(ON)
DS(ON)MAX
DSS
= 1.5mA (Figure 13)
, ID = 0.6A (Figure 11) 0.9 1.0 - S
, ID≈ 1.3A,
-2040ns
-3570ns
- 50 100 ns
-3570ns
DSS
,
-1115nC
- 6.0 - nC
- 5.0 - nC
VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) - 450 - pF
- 200 - pF
-50-pF
Measured From the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Measured Fromthe Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Device’s
Inductances
D
L
D
G
L
S
S
- 4.0 - nH
- 6.0 - nH
Free Air Operation - - 120oC/W
4-276
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