Intersil IRFD110 Datasheet
IRFD110
Data Sheet July 1999
1A, 100V, 0.600 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER PACKAGE BRAND
IRFD110 HEXDIP IRFD110
NOTE: When ordering, use the entire part number.
File Number
Features
• 1A, 100V
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.600Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
2314.3
Packaging
S
HEXDIP
DRAIN
GATE
SOURCE
4-269
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
IRFD110
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFD110 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DM
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
D
100 V
100 V
1.0 A
8.0 A
±20 V
1.0 W
Linear Derating Factor (See Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.008 W/oC
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
19 mJ
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
On-State Drain Current (Note 2) I
D(ON)
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
(Gate to Source + Gate to Drain) Q
g(TOT)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
fs
r
f
gs
gd
ISS
OSS
RSS
D
S
θJA
= 250µA, VGS = 0V (Figure 9) 100 - - V
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I
D(ON)
, VGS = 0V - - 25 µA
DSS
, VGS = 0V, TC = 125oC - - 250 µA
DSS
x r
DS(ON)MAX
, VGS = 10V 1.0 - - A
VGS = ±20V - - ±100 nA
= 0.8A, VGS = 10V (Figures 7, 8) - 0.5 0.6 Ω
VDS > I
VDD = 0.5 x Rated BV
RG = 9.1Ω, RL = 50Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
D(ON)
x r
DS(ON)MAX
, ID = 0.8A (Figure 11) 0.8 1.2 - S
, I
DSS
≈ 1.0A,
D
-1020ns
-1525ns
-1525ns
-1020ns
VGS = 10V, I
I
g(REF)
Gate Charge is Essentially Independent of
Operating Temperature
≈ 1.0A, V
D
DS
= 1.5mA (Figure 13)
= 0.8 x Rated BV
DSS,
- 5.0 7.0 nC
- 2.0 - nC
- 3.0 - nC
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 10)
- 135 - pF
-80-pF
-20-pF
Measured from the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Measured from the Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
Free Air Operation - - 120
Modified MOSFET
Symbol Showing the
Internal Device’s
Inductances
D
L
D
G
L
S
S
- 4.0 - nH
- 6.0 - nH
o
C/W
4-270
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