Intersil IRFAC42, IRFAC40 Datasheet
January 1998
Semiconductor
IRFAC40,
IRFAC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
• 6.2A and 5.4A, 600V
•r
DS(ON)
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
= 1.2Ω and 1.6Ω
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
IRFAC40 TO-204AA IRFAC40
IRFAC42 TO-204AA IRFAC42
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental Type TA17426.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
5-1
File Number 2156.2
IRFAC40, IRFAC42
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRFAC40 IRFAC42 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
DM
GS
600 600 V
600 600 V
6.2
D
3.9
D
5.4
3.4
25 22 A
±20 ±20 V
125 125 W
D
A
A
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 3) (Figures 15, 16) . . . . . . . . . . . . . . . E
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
AS
STG
570 570 mJ
-55 to 150 -55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
pkg
300
L
260
300
260
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSVGS
GS(TH)VGS
DSS
= 0V, ID = 250µA (Figure 10) 600 - - V
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
DSS
, VGS = 0V
- - 250 µA
TJ = 125oC
On-State Drain Current (Note 4) I
D(ON)
VDS> I
D(ON) xrDS(ON) MAX
, VGS = 10V
IRFAC40 6.2 - - µA
IRFAC42 5.4 - - µA
Gate to Source Leakage I
Drain to Source On Resistance (Note 2) r
GSS
DS(ON)VGS
VGS = ±20V - - ±100 nA
= 10V, ID = 3.4A (Figures 8, 9)
IRFAC40 - 0.97 1.2 Ω
IRFAC42 - 1.2 1.6 Ω
Forward Transconductance (Note 4) g
Turn-On Delay Time t
d(ON)
VDS≥ 50V, ID = 3.4A (Figure 12) 4.7 70 - S
fs
VDD= 0.5V x Rated BV
, ID≈ 6.2A, RG =
DSS
-1320ns
9.1Ω, RL = 47Ω, VGS= 10V (Figures 17, 18)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
MOSFET Switching Times are Essentially
r
Independent of Operating Temperature
f
= 10V, ID = 6.2A, V
BV
, I
DSS
G(REF)
DSS
= 1.5mA (Figures 14, 19, 20)
= 0.8 x Rated
-1827ns
-5583ns
-2030ns
-4060nC
Gate Charge is Essentially Independent of
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Operating Temperature
gs
gd
- 5.5 - nC
-20-nC
5-2
IRFAC40, IRFAC42
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
ISS
OSS
RSS
D
S
θJC
θJA
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1300 - pF
160 pF
30 pF
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Measured From The
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
- 5.0 - nH
-13-nH
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
- - 1.0
Free Air Operation - - 30
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current
I
SDM
(Note 3)
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25Ω, peak IAS = 6.8A. See Figures 15, 16.
Modified MOSFET
SD
Symbol Showing the
Integral Reverse
D
- - 6.2 A
- - 25 A
P-N Junction Diode
G
S
TJ = 25oC, ISD= 6.2A, VGS = 0V, (Figure 13) - - 1.5 V
SD
TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 200 450 940 ns
rr
TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/µs 1.8 3.8 7.9 µC
RR
5-3
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