Intersil IRF9630, RF1S9630SM Datasheet

IRF9630, RF1S9630SM

Data Sheet July 1999

6.5A, 200V, 0.800 Ohm, P-Channel Power
MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for other
high-power switching devices. The high input impedance
allows these types to be operated directly from integrated
circuits.

Formerly developmental type TA17512.

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF9630 TO-220AB IRF9630
RF1S9630SM TO-263AB RF1S9630

NOTE: When ordering, usetheentirepartnumber.Add the suffix 9Ato
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.

File Number

Features

• 6.5A, 200V

DS(ON)

= 0.800Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2224.3

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-27

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9630, RF1S9630SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9630,

RF1S9630SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

-200 V

-200 V

-6.5

-4

-26 A

±20 V

75 W

A
A

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

500 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain (“Miller”) Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

d(off)

f

gs

gd

ISS
OSS
RSS

D

S

θJC
θJA

= -250µA, VGS = 0V(Figure 10) -200 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC= 125oC - - -250 µA

DSS

x r

DS(ON)MAX

, VGS = -10V -6.5 - - A

VGS = ±20V - - ±100 nA

= -3.5A, VGS = -10V (Figures 8, 9) - 0.500 0.800 Ω

VDS≥ I

D(ON)

x r

DS(ON)MAX

, ID = -3.5A

2.2 3.5 - S

(Figure 12)
VDD = -100V, ID≈ -6.5A, RG = 50Ω

RL = 15.4Ω (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-3050ns

- 50 100 ns

- 50 100 ns

-4080ns

= -10V, ID = -6.5A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g(REF)

Gate Charge is Essentially Independent of
Operating Temperature

VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)

DSS

-3145nC

-18- nC

-13- nC

- 550 - pF

- 170 - pF

-50- pF

Measured From the
Contact Screw On Tab To
the Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to the Center of
Die

MeasuredFrom the Source
Lead, 6mm (0.25in) From
Package to Source Bond­ing Pad

Typical Socket Mount - - 80

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.67

o
o

C/W
C/W

4-28

IRF9630, RF1S9630SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V

SD

Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 17.75mH, RG= 25Ω, peak IAS= 6.5A. (Figures 15, 16).

ModifiedMOSFET Symbol
Showing the Integral Re­verse P-N Junction Diode

D

G

S

- - -6.5 A

- - -26 A

TJ = 25oC, ISD = -6.5A, VGS = 0V (Figure 13) - - -1.5 V
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 400 - ns

rr

TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 2.6 - µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

-10

-8

-6

-4

, DRAIN CURRENT (A)

D

I

-2

0

050

75 125

TC, CASE TEMPERATURE (oC)

100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.2

0.1

0.1

, NORMALIZED

qJC

Z

0.05

0.02

0.01

THERMAL IMPEDENCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

-1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-29

P

DM

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

1

t

1

t

t

2

2

1/t2

x R

JC

θ

+ T

JC

C

θ

10