Intersil IRF9540, RF1S9540SM Datasheet

IRF9540, RF1S9540SM

Data Sheet July 1999

19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.

Formerly Developmental Type TA17521.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9540 TO-220AB IRF9540
RF1S9540SM TO-263AB RF1S9540

NOTE: When ordering,usetheentire part number.Addthe suffix9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.

File Number

Features

• 19A, 100V

DS(ON)

= 0.200Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2282.6

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-15

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9540, RF1S9540SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9540,

RF1S9540SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DM

GS

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
D

D

-100 V

-100 V

-19

-12

-76 A
±20 V
150 W

A
A

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

960 mJ

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

g(TOT)VGS

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= -250µA, VGS = 0V (Figure 10) -100 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 125oC - - -250 µA

DSS

x r

DS(ON) MAX

, VGS = -10V -19 - - A

VGS = ±20V - - ±100 nA

= -10A, VGS = -10V (Figures 8, 9) - 0.150 0.200 Ω

VDS > I

D(ON)

x r

DS(ON) MAX

, ID = -6A

57-S

(Figure 12)
VDD = -50V, ID≈19A, RG = 9.1Ω, RL = 2.3Ω,

VGS = -10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1620ns

- 65 100 ns

-4770ns

-2870ns

= -10V, ID = -19A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g(REF)

Gate Charge is Essentially Independent of
Operating Temperature

VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)

DSS

,

-7090nC

-14-nC

-56-nC

- 1100 - pF

- 550 - pF

- 250 - pF

Measured From the
Contact Screw on Tab to
the Center of Die

Measured From the Drain
Lead, 6mm (0.25in) from
Package to the Center of
Die

Measured From the
Source Lead, 6mm
(0.25in) From Package to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

--1oC/W

Typical Socket Mount - - 62.5oC/W

4-16

IRF9540, RF1S9540SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 4mH, RG= 25Ω, peak IAS= 19A. (Figures 15, 16).

Modified MOSFET Symbol
Showing the Integral Re­verse

D

- - -19 A

- - -76 A

P-N Junction Diode

G

S

TC = 25oC, ISD = -19A, VGS = 0V (Figure 13) - - -1.5 V

SD

TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 170 - ns

rr

TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 0.8 - µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

C/W)

0.5

o

150

175

-20

-20

-15

-10

, DRAIN CURRENT (A)

D

I

-5

0

25 75

TC, CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

0.1

, TRANSIENT
Z

θJC

THERMAL IMPEDANCE (

0.01
10

0.05

0.02

0.01

-5

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-17

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x R

-1

P

DM

t

1

t

2

1/t2

+ T

θJC

C

1

10