Intersil IRF9530 Datasheet

IRF9530, RF1S9530SM

Data Sheet July 1999

12A, 100V, 0.300 Ohm, P-Channel Power
MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gatedrivepower.Thehighinput impedance allows these
types to be operated directly from integrated circuits.

Formerly developmental type TA17511.

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF9530 TO-220AB IRF9530
RF1S9530SM TO-263AB RF1S9530

NOTE: When ordering,use the entire part number.Addthe suffix 9Ato
obtain the TO-263ABvariant in the tape and reel, i.e., RF1S9530SM9A.

File Number

Features

• 12A, 100V

DS(ON)

= 0.300Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2221.4

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263A

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-9

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9530, RF1S9530SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9530,

RF1S9530SM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

D
D

DM

GS

-100 V

-100 V

-12

-7.5

-48 A

±20 V

A
A

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

500 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

DSSID

GS(TH)VGS

DSS

D(ON)

= -250µA, VGS = 0V, (Figure 10) -100 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS= 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - -25 µA

DSS

= 0V, TC= 125oC - - -250 µA

, VGS = -10V,

-12 - - A

x r

DS(ON)MAX

DSS,VGS

(Figure 7)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain (“Miller”) Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

d(off)

OSS
RSS

VGS = ±20V - - ±100 nA

= -6.5A, VGS = -10V, (Figures 8, 9) - 0.250 0.300 Ω

VDS > I

fs

(Figure 12)
VDD = 50V, ID≈ -12A, RG = 50Ω, VGS= 10V

RL = 4.2Ω, (Figures 17, 18)

r

MOSFET Switching Times are Essentially Inde­pendent of Operating Temperature

f

x r

D(ON)

DS(ON)

=-10V,ID=-12A,V

Max, ID = -6.5A

=0.8x Rated BV

DSS

DSS,

2 3.8 - S

-3060 ns

- 70 140 ns

- 70 140 ns

- 70 140 ns

-2545nC
(Figure 14, 19, 20) Gate Charge
is Essentially Independent of Operating

gs

Temperature

gd

VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 500 - pF

ISS

-13 - nC

-12 - nC

- 300 - pF

- 100 - pF
Measured From the

D

ContactScrew On Tab To
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From The

S

Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

θJC

Typical Socket Mount - - 62.5

θJA

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.67

o
o

C/W
C/W

4-10

IRF9530, RF1S9530SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 2)

Source to Drain Diode Voltage (Note 2) V

SD

Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 5.2mH, RG= 25Ω, peak IAS = 12A. See Figures 15, 16.

Modified MOSFET
Symbol Showing the In­tegral Reverse

D

- - -12 A

- - -48 A

P-N Junction Diode

G

S

TJ = 25oC, ISD = -12A, VGS = 0V,

- - -1.5 V

(Figure 13)
TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 300 - ns

rr

TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 1.8 - µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

-12.0

-9.6

-7.2

-4.8

, DRAIN CURRENT (A)

D

I

-2.4

0

25 50

75 125

TC, CASE TEMPERATURE (oC)

100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.2

0.1

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

0.05

0.02

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-11

P

DM

t

1

t

t

2

θJC

1/t2

+ R

2

θJA

+T

C

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

1