Intersil IRF9520 Datasheet

IRF9520

Data Sheet July 1999

6A, 100V, 0.600 Ohm, P-Channel Power
MOSFET

This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
P-Channel enhancement mode silicon gate power field
effecttransistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. These types
can be operated directly from integrated circuits.

Formerly developmental type TA17501.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9520 TO-220AB IRF9520

NOTE: When ordering, use the entire part number.

File Number

Features

• 6A, 100V

DS(ON)

= 0.600Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

2281.3

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9520

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9520 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DM

GS

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
D

D

-100 V

-100 V

-6

-4

-24 A

±20 V

40 W

A
A

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

370 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= -250µA, VGS = 0V (Figure 10) -100 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -25 µA

DSS

DSS

, VGS = 0V

- - -250 µA

TC = 125oC

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction-to-Case R
Thermal Resistance Junction-to-Ambient R

GSS

OSS
RSS

VDS > I

D(ON)

x r

DS(ON) MAX

, VGS = -10V -6 - - A

VGS = ±20V - - ±100 nA

= -3.5A, VGS = -10V (Figures 8, 9) - 0.500 0.600 Ω

VDS > I

fs

( Figure 12)
VDD = 0.5 x Rated BV

RG = 50Ω , RL = 7.7Ω for V

r

MOSFET Switching Times are Essentially
Independent of Operating Temperature

f

= -10V, ID = -6A, VDS = 0.8 x Rated BV

D(ON)

x r

DS(ON)MAX

, ID≈ -6.0A,

DSS

, ID = -3.5A

= 50Ω

DSS

DSS

0.9 2 - S

-2550ns

- 50 100 ns

- 50 100 ns

- 50 100 ns

-1622nC
(Figure 14) Gate Charge is Essentially
Independent of Operating Temperature

gs
gd

VDS = -25V, VGS = 0V, f = 1MHz

ISS

(Figure 11)

-9-nC

-7-nC

- 300 - pF

- 200 - pF

-50- pF
Measured From the

D

Contact Screw on Tab To
Center of Die

Measured Fromthe Drain
Lead, 6mm (0.25in) from
Package to Center of Die

Measured From the

S

Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

θJC

Typical Socket Mount - - 62.5oC/W

θJA

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 3.12oC/W

4-4

IRF9520

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage

V

SD

(Note 2)
Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 15.4mH, RG= 25Ω, peak IAS= 6.0A.

Modified MOSFET Sym­bol Showing the Integral
Reverse P-N Junction

D

- - -6.0 A

- - -24 A

Diode

G

S

TC = 25oC, ISD = -6.0A, VGS = 0V

- - -1.5 V

(Figure 13)
TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs - 230 - ns

rr

TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/µs - 1.3 - µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 150

TA, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

0.02

THERMAL IMPEDANCE

, NORMALIZED TRANSIENT

θJC

Z

0.01

0.01
SINGLE PULSE

-5

10

-4

10

10

6.0

4.8

3.6

2.4

, DRAIN CURRENT (A)

D

I

1.2

0

25 75 125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

-3

t1, RECTANGULAR PULSE DURATION (s)

-2

10

50 100

TC, CASE TEMPERATURE (oC)

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

1

P

DM

1/t2

θJCxRθJC

150

t

1

t

2

+ T

C

10

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

4-5