Intersil IRF9510 Datasheet

IRF9510

/
j

/

/

/

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[ /Title
(IRF95

10)
Sub­ect (-

3.0A, -

100V,

1.200

Ohm,
P-Chan­nel
Power
MOS­FET)

Autho

r ()

Key-

words
(Inter­sil
Corpo­ration,
P-Chan­nel
Power
MOS­FET,
TO­220AB
)

Cre-

ator ()

DOCI

NFO
pdf­mark

Data Sheet July 1999

3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET

This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested and guaranteed to withstand a specified level of
energy in the breakdown avalanchemodeofoperation.Allof
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17541.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9510 TO-220AB IRF9510

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-220AB

DRAIN

(FLANGE)

File Number

Features

• 3.0A, 100V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

= 1.200Ω

Symbol

D

G

S

SOURCE

DRAIN

GATE

2214.4

[

5-3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9510

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9510 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

T

C

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

DS

DGR

D
D

DM

GS

D

AS

, T

J

STG

L

pkg

-100 V

-100 V

-3.0 A

-2.0 A

-12 A

±20 V

20 W

190 mJ

-55 to 150

300
260

o

C

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Gate to Source Leakage Current I
Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

DSSVGS

GS(TH)VGS

GSS
DSS

D(ON)

= 0V, ID = -250µA, (Figure 10) -100 - - V

= VDS, ID = -250µA -2.0 - -4.0 V
VGS = ±20V - - ±100 nA
VDS = Rated BV
VDS= 0.8x Rated BV
VDS> I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - -25 µA

DSS

DSS,VGS

= 0V,TC= 125oC - - -250 µA

= -10V,

-3.0 - - A

(Figure 7)

Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g

fs

= -10V, ID = -1.5A, (Figures 8, 9) - 1.000 1.200 Ω
VDS>I

D(ON)

x r

DS(ON)

Max, ID = -1.5A,

0.8 1.1 - S

(Figure 12)

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t

VDD= 0.5 x Rated BV
RG = 50Ω, VGS = 10V, (Figures 17, 18)

r

RL = 15.7Ω for V
RL = 12.3Ω for V
MOSFET Switching Times are

f

DSS =

DSS

= 40V

, ID≈ -3.0A,

DSS

50V

-1530ns

-3060ns

-2040ns

-2040ns

Essentially Independent of Operating
Temperature

Total Gate Charge
(Gate to Source + Gate to Drain)

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

Q

g(TOT)VGS

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= -10V, ID= -3A, VDS= 0.8 x Rated BV

DSS,

- 8.5 11 nC
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature

VGS = 0V, VDS = -25V, f = 1.0MHz,
(Figure 11)

- 3.8 - nC

- 4.7 - nC

- 180 - pF

-85-pF

-30-pF
Measured From the

Contact Screw on Tab
to Center of Die

Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die

Measured From The
Source Lead, 6mm
(0.25in)FromHeader to
Source Bonding Pad

Modified MOSFET
Symbol Showing the In­ternal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 6.4

o

C/W

Typical Socket Mount - - 62.5oC/W

5-4

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

I

SD

SDM

IRF9510

Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode

D

- - -3.0 A

- - -12 A

G

S

Source to Drain Diode Voltage(Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

TC = 25oC, ISD= -3.0A, VGS = 0V, (Figure 13) - - -1.5 V

SD

TJ = 150oC, ISD = -3.0A, dISD/dt = 100A/µs - 120 - ns

rr

TJ = 150oC, ISD = -3.0A, dISD/dt = 100A/µs - 6.0 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 31.7mH, RG = 25Ω, peak IAS = 3.0A. See Figures 15, 16.

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC,CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

-5

-4

-3

-2

DRAIN CURRENT (A)

D,

I

-1

0

50 75 10025 150

TC,CASE TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

, NORMALIZED TRANSIENT

THERMAL IMPEDANCE

0.02

θJC

0.01

0.01
SINGLE PULSE

-5

10

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

Z

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

5-5

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t1/t

= PDM x Z

T

J

-2

10

0.1 1 10

θJC

x R

t

2

2

+ T

θJC

C