Intersil IRF9231, IRF9230, IRF9233, IRF9232 Datasheet

January 1998

Semiconductor

IRF9230, IRF9231,

IRF9232, IRF9233

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,
P-Channel Power MOSFETs

Features

• -5.5A and -6.5A, -150V and -200V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

= 0.8Ω and 1.2Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9230 TO-204AA IRF9230
IRF9231 TO-204AA IRF9231
IRF9232 TO-204AA IRF9232
IRF9233 TO-204AA IRF9233

Description

These devices are P-Channel enhancement mode silicon
gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly Developmental type TA17512.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

6-1

File Number 2226.1

IRF9230, IRF9231, IRF9232, IRF9233

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9230 IRF9231 IRF9232 IRF9233 UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . V

DGRVGS

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

D
DM
GS

D

-200 -150 -200 -150 V

-200 -150 -200 -150 V

-6.5

-4.0

-6.5

-4.0

-5.5

-3.5

-5.5

-3.5

-26 -26 -22 -22 A

±20 ±20 ±20 ±20 V

75 75 75 75 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

500 500 500 500 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= -250µA, VGS = 0V, (Figure10)

IRF9230, IRF9232 -200 - - V

IRF9231, IRF9233 -150 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -25 µA

DSS

DSS

, VGS = 0V

- - -250 µA

TC = 125oC

On-State Drain Current (Note 2) I

D(ON)

IRF9230, IRF9231 -6.5 - - A

VDS > I
(Figure 7)

D(ON)

x r

DS(ON) MAX

, VGS = -10V,

IRF9232, IRF9233 -5.5 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSS

DS(ON)ID

VGS = ±20V - - ±100 nA

= -3.5A, VGS = -10V, (Figures 8, 9)

IRF9230, IRF9231 - 0.5 0.8 Ω

IRF9232, IRF9233 - 0.8 1.2 Ω
Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)

VDS > I

fs

(Figure 12)
VDD = 0.5 x Rated BV

D(ON)

x r

DS(ON) MAX

, ID≈ -6.5A,

DSS

, ID = -3.5A,

2.2 3.5 - S

-3050ns

RG = 50Ω, VGS= -10V, (Figure 17, 18)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

r

RL = 14.7Ω for V
RL = 10.9Ω for V

DSS
DSS

= 200V

= 150V
MOSFET Switching Times are Essentially
Independent of Operating Temperature

f

= -10V, ID = -6.5A, VDS = 0.8 x Rated

BV

(Figures 14, 19, 20)

DSS,

- 50 100 ns

- 50 100 ns

-4080ns

-3145nC

Gate Charge is Essentially Independent

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

of Operating Temperature

gs

gd

-18- nC

-13- nC

6-2

IRF9230, IRF9231, IRF9232, IRF9233

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS

OSS

RSS

Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance

θJC

R

θJA

Junction to Ambient

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

SD

I

SDM

VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) - 550 - pF

- 170 - pF

-50- pF

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured From the

S

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

- 5.0 - nH

- 12.5 - nH
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad

G

L

S

S

- - 1.67oC/W
Typical Socket Mount - - 60

Modified MOSFET
Symbol Showing the
Integral Reverse

D

- - -6.5 A

- - -26 A

P-N Junction Diode

G

o

C/W

S

Source to Drain Diode Voltage
(Note 2)

Reverse Recovery Time t
Reverse Recovery Charge Q

V

TC = 25oC, ISD = -6.5A, VGS = 0V,

SD

- - -1.5 V

(Figure 13)
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 400 - ns

rr

TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 2.6 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 17.75mH, RG= 25Ω, peak IAS= 6.5A (Figures 15, 16).

6-3