Intersil IRF9151, IRF9150 Datasheet

5-20

File Number

2280.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9150

-25A, -100V, 0.150 Ohm, P-Channel Power
MOSFET

This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanchemodeofoperation.Allof
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA49230.

Features

• -25A, -100V

•r

DS(ON)

= 0.150Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

Packaging

JEDEC TO-204AE

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9150 TO-204AE IRF9150

NOTE: When ordering, use the entire part number.

G

D

S

DRAIN
(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet February 1999

5-21

Absolute Maximum Ratings T

C

= 25oC, Unless Otherwise Specified

IRF9150 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

-100 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

-100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

-25

-18

A
A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

-100 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

±20 V

Maximum Power Dissipation (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

150 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

AS

1300 mJ

Avalanche Current (Repetitive or Nonrepetitive) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

AR

-25 A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

-55 to 150

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

L

300

o

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

C

= 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= -250µA, VGS = 0V, (Figure 10) -100 - - V

Gate Threshold Voltage V

GS(TH)VGS

= VDS, ID = -250µA -2 - -4 V

Zero Gate Voltage Drain Current I

DSS

VDS = Rated BV

DSS

, VGS = 0V - - -25 µA

VDS = 0.8 x Rated BV

DSS

, VGS = 0V TC = 125oC - - -250 µA

On-State Drain Current (Note 2) I

D(ON)VDS

> I

D(ON)

x r

DS(ON)MAX

, VGS = 10V -25 - - A

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) r

DS(ON)ID

= -10A, VGS = -10V (Figures 8, 9) - 0.09 0.150 Ω

Forward Transconductance (Note 2) g

fs

VDS = -10V, ID = -12.5 (Figure 12) 4 10 - S

Turn-On Delay Time t

d(ON)VDD

= -50V, ID≈ -25A, RG = 6.8Ω, RL = 2.0Ω, (Fig­ures 17, 18) MOSFET Switching Times are Essen­tially Independent of Operating Temperature

-1624ns

Rise Time t

r

- 110 160 ns

Turn-Off Delay Time t

d(OFF)

- 65 100 ns

Fall Time t

f

-4670ns

Total Gate Charge
(Gate to Source + Gate to Drain)

Q

g(TOT)VGS

= -10V, ID = -25A, VDS = 0.8 x Rated BV

DSS

(Figures 14, 19, 20) Gate Charge is Essentially
Indpendent of Operating Temperature

- 82 120 nC

Gate to Source Charge Q

gs

-14-nC

Gate to Drain “Miller” Charge Q

gd

-42-nC

Input Capacitance C

ISS

VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)

- 2400 - pF

Output Capacitance C

OSS

- 850 - pF

Reverse Transfer Capacitance C

RSS

- 400 - pF

Internal Drain Inductance L

D

Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

- 5.0 - nH

Internal Source Inductance L

S

Measured From the
Source Lead, 6mm
(0.25in) From the Flange
and the Source
Bonding Pad

-13-nH

Thermal Resistance Junction to Case R

θJC

- - 0.83oC/W

Thermal Resistance Junction to Ambient R

θJA

Free Air Operation - - 30

o

C/W

L

S

L

D

G

D

S

IRF9150

5-22

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

SD

Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode

- - -25 A

Pulse Source to Drain Current
(Note 3)

I

SDM

- - -100 A

Source to Drain Diode Voltage(Note 2) V

SD

TC = 25oC, ISD = 25A, VGS = 0V (Figure 13) - 0.9 1.5 V

Reverse Recovery Time t

rr

TJ = 25oC, ISD = 25A, dISD/dt = 100A/µs - 150 300 ns

Reverse Recovery Charge Q

RR

TJ = 25oC, ISD = 25A, dISD/dt = 100A/µs 0.3 0.7 1.5 µC

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 3.2mH, RG= 25Ω, peak IAS = 25A See Figures 15, 16.

G

D

S

Typical Performance Curves

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vsCASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TA, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

0.2

0.4

0.6

0.8

1.0

1.2

125

0

50 100

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

150

25 75 125

-25

-20

-15

-10

-5

-30

t1, RECTANGULAR PULSE DURATION (s)

Z

θJC

, NORMALIZED TRANSIENT

THERMAL IMPEDANCE (

o

C/W)

10

-3

10

-2

1

10

-5

10

-4

0.01

0.1

10

10

-1

1

P

DM

NOTES:
DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

t

1

t

2

SINGLE PULSE

0.1

0.02

0.2

0.5

0.01

0.05

IRF9150