Intersil IRF9143, IRF9140, IRF9141 Datasheet

IRF9140

Data Sheet February 1999

-19A, -100V, 0.200 Ohm, P-Channel Power
MOSFET

These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA17521.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9140 TO-204AA IRF9140

NOTE: When ordering, include the entire part number.

File Number

Features

• -19A, -100V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.200Ω

Components to PC Boards”

Symbol

D

G

2278.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

S

SOURCE (PIN 2)

5-14

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9140

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9140 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

-100 V

-100 V

-19

-12

-76 A
±20 V
125 W

A
A

Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

960 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

DSSVGS

GS(TH)VGS

DSS

D(ON)VDS

= 0V, ID = -250µA (Figure 10) -100 - - V

= VDS, ID = -250µA -2.0 - -4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON) xrDS(ON) Max

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 125oC - - -250 µA

DSS

, VGS = -10V

-19 - - A

(Figure 7)

Gate to Source Leakage I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

GSS

VGS = ±20V - - ±100 nA

= -10V, ID = -10A (Figures 8, 9) - 0.15 0.20 Ω
VDS>I

fs

D(ON) xrDS(ON) Max

= -50V, ID≈ −19A, RG = 9.1Ω, RL = 2.3Ω

(Figures 17, 18) MOSFET Switching Times are

r

Essentially Independent of Operating Temperature

, ID = -10A 5.0 7.0 - S

-1620ns

- 65 100 ns

-4770ns

f

= -10V, ID = -19A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g (REF)

Gate Charge is Essentially Independent of

gs

Operating Temperature

gd

VGS = 0V, VDS = -25V, f = 1.0MHz

ISS

(Figure 10)

OSS
RSS

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured From The

S

Source Lead, 6mm

DSS

Modified MOSFET Sym­bol Showing the Internal
Devices
Inductances

D

L

D

-2890ns

,

-7090nC

-14-nC

-56-nC

- 1100 - pF

- 550 - pF

- 250 - pF

- 5.0 - nH

- 12.5 - nH

(0.25in) From the Flange

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

and the Source Bonding
Pad

θJC

Free Air Operation - - 30

θJA

L

S

S

--1oC/W

o

C/W

5-15

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

(Note 3)

SD

I

SDM

IRF9140

Modified MOSFET
Symbol Showing the In­tegral Reverse
P-N Junction Diode

D

- - -19 A

- - -76 A

G

S

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

TJ = 25oC, ISD= -19A, VGS = 0V - - -1.5 V

SD

TJ = 150oC, ISD = 19A, dISD/dt = 100A/µs - 170 - ns

rr

TJ = 150oC, ISD = -19A, dISD/dt = 100A/µs - 0.8 - µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 4µH, RG = 25Ω, peak IAS = 19A. See Figures 15, 16.

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

-20

-15

-10

DRAIN CURRENT (A)

-5

D,

I

0

50 1000 150

TC,CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1.0

0.5

0.2

0.1

0.1

0.05

0.02

THERMAL IMPEDANCE

0.01
10

-5

0.01

SINGLE PULSE

-4

10

-3

10

t

, RECTANGULAR PULSE DURATION (s)

1

NORMALIZED TRANSIENT

θJC,

Z

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

5-16

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

t

2

θJC

2

+ T

2

C

NOTES:
DUTY FACTOR: D = t1/t

= PDM x Z

PEAK T

J

-2

10

0.1 1 10