Intersil IRF9132, IRF9130, IRF9133, IRF9131 Datasheet

IRF9130

Data Sheet February 1999

-12A, -100V, 0.30 Ohm, P-Channel Power
MOSFET

These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.

Formerly developmental type TA17511.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9130 TO-204AA IRF9130

NOTE: When ordering, use the entire part number.

File Number

Features

• -12A, -100V

DS(ON)

= 0.30Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

2220.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

5-8

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9130

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9130 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

-100 V

-100 V

-12

-7.5

-48 A

±20 V

75 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

500 mJ

-55 to 150

300

o

C

o

C

NOTE:

1. TJ = 25oC to TJ = 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g

Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= -250µA, VGS = 0V, (Figure 10) -100 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - -25 µA

DSS

, VGS = 0V, TC = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = -10V -12 - - A

VGS = ±20V - - ±100 nA

= -6.5A, VGS = -10V, (Figures 8, 9) - 0.25 0.30 Ω

VDS > I

D(ON)

x r

DS(ON)MAX

, ID = -6.5A

2 3.7 - S

(Figure 12)

= 0.5 x Rated BV
RL = 5.7Ω (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature

, ID≈ -6.5A, RG = 50Ω

DSS

-3060ns

- 70 140 ns

- 70 140 ns

- 70 140 ns

= -10V, ID = -15A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g(REF)

Gate Charge is Essentially Independent of
Operating Temperature

DSS

-2545nC

-13-nC

-12-nC

VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)

- 500 - pF

- 300 - pF

- 100 - pF

Measured Between the
Contact Screw on the
Flange that is Closer to
Sourceand Gate Pins and
the Center of Die

Measured From the
Source Lead, 6mm
(0.25in) From the Flange
and the Source
Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 1.67oC/W

Typical Socket Mount - - 30

o

C/W

5-9

IRF9130

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 25V, starting TJ= 25oC, L = 5.2mH, RG= 25Ω, peak IAS= 12A. See Figures 15, 16.

Modified MOSFET Symbol

SD

Showing the Integral Re-

D

verse P-N Junction Diode

G

S

TC = 25oC, ISD = -12A, VGS = 0V (Figure 13) - - -1.5 V

SD

TJ =150oC, ISD = -12A, dISD/dt = 100A/µs - 300 - ns

rr

TJ = 150oC, ISD = -12A, dISD/dt = 100A/µs - 1.8 - µC

RR

- - -12 A

- - -48 A

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

C/W)

0.5

o

-12.0

-9.6

-7.2

-4.8

, DRAIN CURRENT (A)

D

I

-2.4

0

25 75 125

50 100

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.2

0.1

0.1

0.05

0.02

THERMAL IMPEDANCE (

0.01
10

0.01
SINGLE PULSE

-5

, NORMALIZED TRANSIENT

θJC

Z

5-10

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

-1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

P

DM

t

1

t

2

2

x R

θJC

+ T

C

10

θJC

1