Intersil IRF830 Datasheet

IRF830

Data Sheet July 1999

4.5A, 500V, 1.500 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17415.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF830 TO-220AB IRF830

NOTE: When ordering, include the entire part number.

File Number

Features

• 4.5A, 500V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.500Ω

Components to PC Boards”

Symbol

D

G

1582.3

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

S

4-251

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF830

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF830 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

D
DM
GS

D

500 V
500 V

4.5 A

3.0 A
18 A

±20 V

75 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs

gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 500 - - V
= VDS, ID = 250µA 2.0 - 4.0 V

VDS = Rated BV

= 0.8 x Rated BV

V

DS

VDS> I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

= 10V 4.5 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 2.5A (Figures 8, 9) - 1.3 1.5 Ω
VDS≥ 10V, ID = 2.7A (Figure 12) 2.5 4.2 - S
VDD= 250V, I

MOSFET Switching Times are Essentially
Independent of Operating Temperature.

≈ 4.5A, R

D

= 12Ω, RL = 54Ω

G

-1017ns

-1523ns

-3353ns

-1623ns

= 10V, I

I

g(REF)

Essentially Independent of Operating Temperature.

≈ 4.5A, V

D

= 0.8 x Rated BV

DS

= 1.5mA (Figure 14) Gate Charge is

DSS

-2232nC

- 3.5 - nC

-11-nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 600 - pF

- 100 - pF

-20-pF

Measured from the
ContactScrewon Tab to
Center of Die

Measuredfrom theDrain
Lead, 6mm (0.25in)
FromPackagetoCenter
of Die

Measured from the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.67oC/W

Free Air Operation - - 62.5oC/W

4-252

IRF830

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 25mH, RG = 25Ω, peak IAS = 4.5A.

Modified MOSFET
Symbol Showing the
Integral Reverse

D

- - 4.5 A

- - 18 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 4.5A, VGS = 0V (Figure 13) - - 1.6 V

SD

TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs 180 350 760 ns

rr

TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs 0.96 2.2 4.3 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATIONvs CASE

TEMPERATURE

1

0.5

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.2

0.1

0.1

0.05

0.02

0.01

THERMAL IMPEDANCE

, NORMALIZED TRANSIENT

θJC

Z

0.01

-5

10

SINGLE PULSE

4-253

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-4

10

-3

10

t

, RECTANGULAR PULSE DURATION (s)

1

-2

10

0.1 1 10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

P

DM

t

1

t

2

2

x R

θJC

+ T

C

θJC