Intersil IRF820 Datasheet

IRF820

Data Sheet July 1999

2.5A, 500V, 3.000 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17405.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF820 TO-220AB IRF820

NOTE: When ordering, use the entire part number.

File Number

Features

• 2.5A, 500V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3.000Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

1581.4

Packaging

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-245

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF820

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF820 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

500 V
500 V

2.5

1.6

8.0 A

±20 V

50 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

210 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 500 - - V

= VGS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V (Figure 7) 2.5 - - A

VGS = ±20V - - ±100 nA

= 1.4A, VGS = 10V (Figures 8, 9) - 2.5 3.0 Ω
VDS≥ 10V, ID = 2.0A (Figure 12) 1.5 2.3 - S
VDD = 250V, ID≈ 2.5A, RGS = 18Ω, RL = 96Ω

MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1115ns

-1118ns

-2942ns

-1218ns

= 10V, ID = 2.5A, VDS = 0.8 x Rated BV

I

= 1.5mA

g(REF)

DSS

(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature

-1219nC

- 2.5 - nC

- 6.0 - nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 360 - pF

-60-pF

-10-pF

Measured From the
Contact Screw on Tab to
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

MeasuredFrom the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 2.5oC/W

Free Air Operation - - 80

o

C/W

4-246

IRF820

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 60mH, RG= 25Ω, peak IAS = 2.5A.

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

D

- - 2.5 A

- - 8.0 A

Rectifier

G

S

TJ = 25oC, ISD = 2.5A, VGS = 0V (Figure 13) - - 1.6 V

SD

TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 130 300 540 ns

rr

TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 0.57 1.4 2.3 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

C/W)

o

0.5

1

0.2

0.1

, TRANSIENT
Z

θJC

THERMAL IMPEDANCE (

0.1

-2

10

10

0.05

0.02

0.01

SINGLE PULSE

-5

-4

10

10

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

25 75 125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t1, RECTANGULAR PULSE DURATION (s)

-2

10

50 100

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

0.1 1 10

2

θJC

2

+ T

150

C

4-247

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE