Intersil IRF740 Datasheet

IRF740

Data Sheet July 1999

10A, 400V, 0.550 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.

Formerly developmental type TA17424.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF740 TO-220AB IRF740

NOTE: When ordering, include the entire part number.

File Number

Features

• 10A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.550Ω

Components to PC Boards”

Symbol

D

G

2311.3

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

TOP VIEW

SOURCE

DRAIN

GATE

S

4-239

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF740

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF740 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

400 V
400 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID 10 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

6.3 A
40 A

±20 V

125 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

520 mJ

-55 to 150

300

260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θCS

θJA

= 0V, ID = 250µA (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

, VGS = 10V 10 - - A

VGS = ±20V - - ±500 nA

= 10V, ID = 5.2A (Figures 8, 9) - 0.47 0.550 Ω
VDS≥ 50V, ID = 5.2A (Figure 12) 5.8 8.9 - S
VDD= 200V, ID≈ 10A, RG = 9.1Ω,

RL = 20Ω, VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1521ns

-2541ns

-5275ns

-2536ns

= 10V, ID = 10A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figure 14)

g(REF)

DSS

Gate Charge is Essentially Independent of Operating
Temperature

-4163nC

- 6.5 - nC

-23-nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1250 - pF

- 300 - pF

-80-pF

Measured From the
Contact Screw on Tab to
Center of Die

MeasuredFrom the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.0

o

C/W

Free Air Operation - - 62.5oC/W

4-240

IRF740

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

SD

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 9.1µH, RG = 25Ω, peak IAS = 10A.

Modified MOSFET
Symbol Showing the
Integral Reverse

D

- - 10 A

- - 40 A

P-N Junction Diode

G

S

TJ = 25oC, ISD= 10A, VGS = 0V (Figure 13) - - 2.0 V

SD

TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs 170 390 790 ns

rr

TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs 1.6 4.5 8.2 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

0.02

10

, TRANSIENT THERMAL IMPEDANCE

θJC

Z

10

0.01

-2

-3

-5

10

SINGLE PULSE

-4

10

10

10

8

6

4

DRAIN CURRENT (A)

D,

I

2

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

, RECTANGULAR PULSE DURATION (S)

t

1

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

t

2

NOTES:
DUTY FACTOR: D = t1/t

PEAK T

0.1 1 10

= PDMx Z

J

2

θJC

2

+ T

C

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-241