Intersil IRF730 Datasheet

IRF730

Data Sheet July 1999

5.5A, 400V, 1.000 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA17414.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF730 TO-220AB IRF730

NOTE: When ordering, use the entire part number.

File Number

Features

• 5.5A, 400V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.000Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

1580.5

Packaging

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-232

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF730

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF730 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

400 V
400 V

5.5

3.5
22 A

±20 V

75 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS>ID(ON)xrDS(ON)MAX,VGS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 400 - - V

= VGS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

= 10V (Figure 7) 5.5 - - A

VGS = ±20V - - ±100 nA

= 3.0A, VGS = 10V (Figure 8, 9) - 0.800 1.000 Ω

VDS≥ 10V, ID = 3.3A (Figure 12) 2.9 4.4 - S

= 200V, ID≈ 5.5A, RGS = 12Ω, RL = 35Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1017ns

-2029ns

-3556ns

-1524ns

= 10V, ID = 5.5A, VDS = 0.8 x Rated BV
I

= 1.5mA, (Figure 14)

g(REF)

Gate Charge is Essentially Independent of
Operating Temperature

DSS

,

-2035nC

- 3.0 - nC

-10-nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 600 - pF

- 150 - pF

-40-pF

Measured From the
Contact Screw on Tab to
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.67oC/W

Free Air Operation - - 80oC/W

4-233

IRF730

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 17mH, RG= 25Ω, peak IAS= 5.5A.

Modified MOSFET Symbol

SD

Showing the Integral
Reverse P-N Junction

D

- - 5.5 A

- - 22 A

Rectifier

G

S

TJ = 25oC, ISD = 5.5A, VGS = 0V (Figure 13) - - 1.6 V

SD

TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs 140 300 660 ns

rr

TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs 0.93 2.1 4.3 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

C/W)

o

1

0.5

6

4

2

, DRAIN CURRENT (A)

D

I

0

50 100

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

15025 75 125

0.2

0.1

THERMAL IMPEDANCE (

0.01
10

0.1

0.05

0.02

0.01

-5

, TRANSIENT

θJC

Z

SINGLE PULSE

-4

10

4-234

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

-1

10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

P

DM

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

10

t

0

1
2

θJC

1/t2

+ T

C

1

10