Intersil IRF646 Datasheet

IRF646

Data Sheet June 1999

14A, 275V, 0.280 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17423.

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF646 TO-220AB IRF646

NOTE: When ordering, use the entire part number.

File Number

Features

• 14A, 275V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275VDC Rating-120VAC Line System Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.280Ω

DS(ON)

Components to PC Boards”

Symbol

D

2169.3

Packaging

G

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-214

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF646

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF646 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

275 V
275 V

14

8.8
56 A

±20 V
125 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

550 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 275 - - V

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V (Figure 7) 14 - - A

VGS = ±20V - - ±100 nA

= 8A, VGS = 10V (Figures 8, 9) - 0.200 0.280 Ω

VDS≥ 50V, ID = 8A (Figure 12) 6.7 10 - S

= 125V, ID≈ 14A, RGS = 9.1Ω, RL = 8.6Ω,
MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1624ns

- 67 100 ns

-5380ns

-4974ns

= 10V, ID = 14A, VDS = 0.8 x Rated BV
I

= 1.5mA, (Figure 14) Gate Charge is

G(REF)

DSS,

Essentially Independent of Operating Temperature

-3959nC

- 6.6 - nC

-20-nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1300 - pF

- 320 - pF

-69-pF

Measuredfromthe Contact
Screw on Tab to Center of
Die

Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die

Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 4.5 - nH

- 7.5 - nH

- 7.5 - nH

--1oC/W

Free Air Operation - - 80

o

C/W

4-215

IRF646

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 4.5mH, RG= 25Ω,peak IAS = 14A.

ModifiedMOSFET Symbol
Showing the Integral
Reverse P-N Junction

D

- - 14 A

- - 56 A

Diode

G

S

TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) - - 1.8 V

SD

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 150 300 640 ns

rr

TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 1.6 3.4 7.2 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

T

, CASE TEMPERATURE (oC)

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

0.1

0.2

0.1

0.05

0.02

0.01

-5

10

SINGLE PULSE

-4

10

C/W)

o

0.01

, NORMALIZED TRANSIENT

θJC

THERMAL IMPEDANCE (

Z

0.001

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

25 50 75 100 125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

NOTES:
DUTY FACTOR: D = t

TJ = PDM x Z

-1

10

150

P

DM

t

1

t

2

1/t2

x R

θJC

+ T

C

10

θJC

1

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

4-216