Intersil IRF614 Datasheet
January 1998
IRF614
2.0A, 250V, 2.0 Ohm,
N-Channel Power MOSFET
Features
• 2.0A, 250V
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 2.0Ω
DS(ON)
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
IRF614 TO-220AB IRF614
NOTE: When ordering, use the entire part number.
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17443.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
1
File Number 3273.1
IRF614
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRF614 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
D
DM
GS
D
250 V
250 V
2.0
1.3
8.0 A
±20 V
20 W
A
A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . TJ,T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
61 mJ
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
On-State Drain Current (Note 2) I
D(ON)VDS
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)VGS
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSVGS
DSS
GSS
fs
r
f
gs
gd
ISS
OSS
RSS
= 0V, ID = 250µA, (Figure 10) 250 - - V
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
, VGS = 0V
DSS
- - 250 µA
TJ = 125oC
> I
D(ON)
x r
DS(ON)MAX
, VGS = 10V,
2.0 - - A
(Figure 7)
VGS = ±20V - - ±100 nA
= 10V, ID = 2.5A, (Figures 8, 9) - 1.6 2.0 A
VDS > I
D(ON)
x r
DS(ON)MAX
, ID = 2.5A,
0.8 1.2 - S
(Figure 12)
VDD = 0.5 x Raterd BV
, ID≈ 2.0A, RL = 61Ω
DSS
- 8.9 13 ns
VGS = 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially Independent of Operating Temperature
-1218ns
-1827ns
- 8.9 15 ns
= 10V, ID = 2.0A, VDS = 0.8 x Rated BV
I
= 1.5mA (Figures 14, 19, 20) Gate
G(REF)
DSS
- 9.6 14.4 nC
Charge is Essentially Independent of Operating
Temperature
- 2.4 3.6 nC
- 4.5 6.7 nC
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 180 - pF
-53- pF
-14- pF
2
IRF614
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 3)
θJC
θJA
SD
I
SDM
Measured From the
D
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Measured From the
S
Source Lead, 6mm
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
- 4.5 - nH
- 7.5 - nH
(0.25in) from Header to
Source Bonding Pad
G
L
S
S
- - 6.4oC/W
Free Air Operation - - 62.5oC/W
Modified MOSFET Symbol Showing the Integral
Reverse P-N Junction
D
- - 2.0 A
- - 8.0 A
Rectifier
G
S
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q
TJ = 25oC, ISD = 2.0A, VGS = 0V, (Figure 13) - - 2.0 V
SD
TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs 67 - 340 ns
rr
TJ = 25oC, ISD = 2.0A, dISD/dt = 100A/µs 0.24 0.54 1.2 µC
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD= 10V, starting TJ= 25oC, L = 6.18mH, RG= 50Ω, peak IAS = 5A. See Figures 15, 16.
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
, DRAIN CURRENT (A)
I
2.0
1.6
1.2
0.8
D
0.4
0
25 50 75 100 125
T
, CASE TEMPERATURE (oC)
C
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
3
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