Intersil IRF610 Datasheet

IRF610

Data Sheet June 1999

3.3A, 200V, 1.500 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17442.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF610 TO-220AB IRF610

NOTE: When ordering, use the entire part number .

File Number

Features

• 3.3A, 200V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.500Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

1576.3

Packaging

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-190

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF610

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF610 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

200 V
200 V

3.3

2.1

A
A

8A

±20 V

43 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.34 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

46 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSVGS

GS(TH)VDS

DSS

= 0V, ID = 250µA (Figure 10) 200 - - V

= VGS, ID = 250µA 2-4V
VDS = Max Rating, VGS = 0V - - 25 µA
VDS = Max Rating x 0.8, VGS = 0V, TJ = 125oC - - 250 µA

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

OSS
RSS

VDS > I

D(ON)

x r

DS(ON)MAX

, VGS = 10V (Figure 7) 3.3 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 1.6A (Figures 8, 9) - 1.0 1.5 Ω
VDS≥ 50V, ID = 1.6A (Figure 12) 0.8 1.3 - S

fs

VDD = 100V, ID≈ 3.3A, RG = 24Ω, RL = 30Ω
MOSFET Switching Times are

r

Essentially Independent of Operating
Temperature

f

= 10V, ID = 3.3A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figure 14) Gate Charge is

g(REF)

Essentially Independent of Operating

gs

Temperature

gd

VGS = 0V, VDS = 25V, f = 1MHz

ISS

(Figure 11)

DSS

,

- 8 12 ns

-1726ns

-1321ns

- 9 13 ns

- 5.3 8.2 nC

- 1.2 - nC

- 3.0 - nC

- 135 - pF

-60-pF

-16-pF

Measured From the

D

Contact Screw on Tab to
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From the Source

S

Lead, 6mm (0.25in) from
Header to Source Bonding
Pad

θJC

Free Air Operation - - 80

θJA

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

G

D

L

D

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 2.9

o
o

C/W
C/W

4-191

IRF610

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 6.4mH, RG= 25Ω, peak IAS = 3.3A.

Modified MOSFET Symbol

SD

Showing the Integral
Reverse P-N Junction

D

- - 3.3 A

--8 A

Rectifier

G

S

TJ = 25oC, ISD = 3.3A, VGS = 0V (Figure 13) - - 2.0 V

SD

TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 75 160 310 ns

rr

TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 0.33 0.9 1.4 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

C/W)

0.5

o

1

0.2

0.1

θJC

0.1

THERMAL IMPEDANCE (

0.01
10

0.05

0.02

0.01
SINGLE PULSE

-5

-4

10

, TRANSIENT
Z

5.0

4.0

3.0

2.0

, DRAIN CURRENT (A)

D

I

1.0

0

25 50 75 100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

t1, RECTANGULAR PULSE DURATION (S)

-2

10

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

0.1 1 10

2

θJC

125

2

+ T

150

C

4-192

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE