Intersil IRF530N Datasheet

TM

IRF530N

Data Sheet March 2000

22A, 100V, 0.064 Ohm, N-Channel Power MOSFET
Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

Symbol

D

G

File Number 4843

Features

• Ultra Low On-Resistance

-r

= 0.064Ω, VGS= 10V

DS(ON)

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER

©

Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

PART NUMBER PACKAGE BRAND

IRF530N TO-220AB IRF530N

©

S

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

C

DSS

DGR

GS

DM

STG

pkg

IRF530N UNITS

100 V
100 V
±20 V

D
D

D

L

22
15

Figure 4

85

0.57

-55 to 175

300
260

A
A

W

W/oC

o

C

o

C

o

C

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation. SABER© is a Copyright of Analogy Inc.

IRF530N

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

VDS = 95V, VGS = 0V - - 1 µA
VDS = 90V, VGS = 0V, TC = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

ISS

OSS

RSS

VGS = ±20V - - ±100 nA

TO-220 - - 1.76oC/W

VDD = 50V, ID = 22A
VGS= 10V,
RGS = 13Ω
(Figures 18, 19)

r

f

VGS = 0V to 10V - 23 28 nC
VGS = 0V to 2V - 1.7 2 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

= 250µA, VGS = 0V (Figure 11) 100 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 22A, VGS = 10V (Figure 9) - 0.054 0.064 Ω

--62oC/W

- - 75 ns

- 7.9 - ns

-42-ns

-47-ns

-39-ns

- - 130 ns

= 0V to 20V VDD = 50V,

-4352nC
ID = 22A,
I

= 1.0mA

g(REF)

(Figures 13, 16, 17)

- 3.5 - nC

- 8.7 - nC

- 790 - pF

- 215 - pF

-70-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

RR

ISD = 22A - - 1.25 V
ISD = 11A - - 1.00 V

rr

ISD = 22A, dISD/dt = 100A/µs - - 100 ns
ISD = 22A, dISD/dt = 100A/µs - - 313 nC

Typical Performance Curves

IRF530N

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

150

0

25

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

VGS= 10V

50 75 100 125 150

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

θJC

10

0

2

x R

θJC

+ T

175

2

C

1

10

300

100

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

1

10