Intersil IRF510 Datasheet

IRF510

Data Sheet November 1999

5.6A, 100V, 0.540 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy inthe breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17441.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF510 TO-220AB IRF510

NOTE: When ordering, include the entire part number.

File Number 1573.4

Features

• 5.6A, 100V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.540Ω

Components to PC Boards”

Symbol

D

G

Packaging

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 1999

IRF510

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF510 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

100 V
100 V

5.6 A
4A

20 A

±20 V

43 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

19 mJ

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Junction to Case R
Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC
θJA

= 0V, ID = 250µA, (Figure 10) 100 - - V
= VDS, ID = 250µA 2.0 - 4.0 V

VDS = 95V, VGS = 0V - - 25 µA

= 0.8 x Rated BV

V

DS

VDS> I

D(ON) xrDS(ON)MAX

, VGS = 0V, TJ = 150oC - - 250 µA

DSS

, VGS = 10V (Figure 7) 5.6 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 3.4A (Figures 8, 9) - 0.4 0.54 Ω

VGS = 50V, ID = 3.4A (Figure 12) 1.3 2.0 - S

≈ 5.6A, RGS = 24Ω, VDD = 50V, RL = 9Ω,
VDD = 50V, VGS = 10V
MOSFET switching times are essentially independent
of operating temperature

- 8 12 ns

-2563ns

-157 ns

-1259ns

= 10V, ID = 5.6A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figure 14)

G(REF)

Gate charge is essentially independent of operating
temperature.

DSS

,

- 5.0 30 nC

- 2.0 - nC

- 3.0 - nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 135 - pF

-80- pF

-20- pF

Measured From the
Contact Screw On Tab To
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Free air operation - - 80

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 3.5

o
o

C/W
C/W

2

IRF510

Source to Drain Diode Specifications

PARAMETER SYMBOL Test Conditions MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, start TJ = 25oC, L = 910µH, RG = 25Ω, peak IAS = 5.6A.

Modified MOSFET
Symbol Showing the

D

Integral Reverse
P-N Junction Diode

TJ = 25oC, ISD= 5.6A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 4.6 96 200 ns

rr

TJ = 25oC, ISD = 5.6A, dISD/dt = 100A/µs 0.17 0.4 0.83 µC

RR

G

S

- - 5.6 A

- - 20 A

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

T

C

, CASE TEMPERATURE (oC)

125

150

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

C/W)

o

0.5

1

0.2

0.1

0.1

THERMAL IMPEDANCE (

0.01
10

-5

0.05

0.02

0.01
SINGLE PULSE

10

-4

-3

10

t

1

, TRANSIENT

θJC

Z

10

8

6

4

DRAIN CURRENT (A)

D,

I

2

175

0

50 75 100 15025 175

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

-2

10

, RECTANGULAR PULSE DURATION (S)

125

TC, CASE TEMPERATURE (oC)

P

DM

t

1

t
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ= PDM x Z

0.1 1 10

2

2

+ T

θJC

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3