Intersil IRF432, IRF430, IRF433, IRF431 Datasheet

IRF430

Data Sheet March 1999

4.5A, 500V, 1.500 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17415.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF430 TO-204AA IRF430

NOTE: When ordering, use the entire part number.

File Number

Features

• 4.5A, 500V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.500Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

1572.4

Packaging

S

JEDEC TO-204AA

DRAIN
(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF430

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF430 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

500 V
500 V

4.5

3.0
18 A

±20 V

75 W

A
A

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I
Drain to Source On Resistance (Note 2) r

D(ON)

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

GSS
DSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 500 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VGS = ±20V ±100 nA
VDS = Rated BV
VDS= 0.8 x RatedBV
VDS>I

D(ON)xrDS(ON)MAX,VGS

, VGS = 0V - - 25 µA

DSS

DSS,VGS

= 0V, TJ= 125oC - - 250 µA

= 10V(Figure7) 4.5 - - A

= 2.5A, VGS = 10V (Figures 8, 9) - 1.3 1.500 Ω
VDS≥ 10V, ID = 2.7A (Figure 12) 2.5 3.2 - S
VDD = 250V, ID≈ 4.5A, RG = 12Ω, RL = 50Ω

(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature

-1117ns

-1523ns

-3553ns

-1523ns

= 10V,ID≈ 6.0A,VDS= 0.8xRatedBV

I

= 1.5mA (Figures 14, 19, 20) Gate

g(REF)

Charge is Essentially Independent of Operating
Temperature

DSS

,

-2232nC

- 3.5 - nC

-11- nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 600 - pF

- 100 - pF

-30- pF

Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and the Source Bonding
Pad

Free Air Operation - - 30

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.83

o
o

C/W
C/W

2

IRF430

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 25mH, RG= 25Ω, peak IAS = 4.5A. See Figures 15, 16.

Modified MOSFET Symbol
Showing the Integral

D

Reverse P-NJunctionDiode

G

S

TJ = 25oC, ISD = 4.5A, VGS = 0V (Figure 13) - - 1.4 V

SD

TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs 180 370 760 ns

rr

TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs 0.96 2 4.3 µC

RR

- - 4.5 A

- - 18 A

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

1.0

0.5

C/W)

o

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

50 75 100 15025

TC, CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.2

0.1

0.05

0.1

, TRANSIENT

θJC

Z

THERMAL IMPEDANCE (

0.01
10

-5

0.02

0.01
SINGLE PULSE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-4

10

-3

10

, RECTANGULAR PULSE DURATION (s)

t

1

-2

10

0.1 1 10

2

θJC

2

+ T

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3