Intersil IRF423, IRF421, IRF420, IRF422 Datasheet
July 1998
Semiconductor
IRF420, IRF421,
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
Features
• 2.2A and 2.5A, 450V and 500V
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 3.0Ω and 4.0Ω
DS(ON)
Components to PC Boards”
Ordering Information
P AR T NUMBER P ACKAGE BRAND
IRF420 TO-204AA IRF420
IRF421 TO-204AA IRF421
IRF422 TO-204AA IRF422
IRF423 TO-204AA IRF423
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17405.
Symbol
D
G
S
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 1571.3
IRF420, IRF421, IRF422, IRF423
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
C
IRF420 IRF421 IRF422 IRF423 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
D
DM
GS
D
500 450 500 450 V
500 450 500 450 V
2.5
1.6
2.5
1.6
2.2
1.4
2.2
1.4
10 10 8 8 A
±20 ±20 ±20 ±20 V
50 50 50 50 W
A
A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . .TJ, T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
Package Body for 10s, See TB334. . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
210 210 210 210 mJ
-55 to 150 -55 to 150 -55 to 150 -55 to 150
300
260
300
260
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V, (Figure 10)
IRF420, IRF422 500 - - V
IRF421, IRF423 450 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
GS(TH)VGS
DSS
= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 25 µA
DSS
, VGS = 0V,
DSS
- - 250 µA
TJ= 125oC
On-State Drain Current (Note 2) I
D(ON)VDS
IRF420, IRF421 2.5 - - A
> I
(Figure 7)
D(ON)
x r
DS(ON)MAX
, VGS = 10V
IRF422, IRF423 2.2 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
GSS
VGS = ±20V - - ±100 nA
= 1.4A, VGS = 10V, (Figures 8, 9)
IRF420, IRF421 - 2.5 3.0 Ω
IRF422, IRF423 - 3.0 4.0 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)VDD
VDS≥ 10V, ID = 2.0A, (Figure 12) 1.5 2.3 - S
fs
= 250V, ID≈ 2.5A, RG = 18Ω, RL = 96Ω,
-1015ns
VGS = 10V, (Figures 17, 18) MOSFET Switching
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Times are Essentially Independent of Operating
r
Temperature
f
= 10V, ID≈ 2.5A, VDS = 0.8 x Rated BV
I
= 1.5mA, (Figures 14, 19, 20)
G(REF)
DSS,
-1218ns
-2842ns
-1218ns
-1119nC
Gate Charge is Essentially Independent of
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Operating Temperature
gs
gd
-5-nC
-6-nC
5-2
IRF420, IRF421, IRF422, IRF423
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 300 - pF
ISS
OSS
RSS
Measured between the
D
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.
Measured from the
S
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
θJC
Free Air Operation - - 30
θJA
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.
D
L
D
G
L
S
S
-75- pF
-20- pF
- 5.0 - nH
- 12.5 - nH
- - 2.5oC/W
o
C/W
Continuous Source to Drain Current I
SD
Modified MOSFET
D
- - 2.5 A
Symbol Showing the
Pulse Source to Drain Current
I
(Note 3)
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
SDM
Integral Reverse P-N
Junction Diode
TJ = 25oC, ISD = 2.5A, VGS = 0V, (Figure 13) - - 1.4 V
SD
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 130 270 540 ns
rr
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 0.57 1.2 2.3 µC
RR
G
S
- - 10 A
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25Ω, peak IAS = 2.5A, Figures 15, 16.
5-3
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