Intersil IRF340, IRF343, IRF341IRF342 Datasheet

1

File Number

2307.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF340

10A, 400V, 0.550 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is designed, tested and guaranteed to
withstand a specific level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switchingconverters,motordrivers,relaydrivers,anddrivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.

Formerly developmental type TA17424.

Features

• 10A, 400V

•r

DS(ON)

= 0.550Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

Packaging

JEDEC TO-204AE

Ordering Information

PART NUMBER PACKAGE BRAND

IRF340 TO-204AE IRF340

NOTE: When ordering, use the entire part number.

D

G

S

DRAIN
(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet March 1999

2

Absolute Maximum Ratings T

C

= 25oC, Unless Otherwise Specified

IRF340 UNITS

Drain To Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

400 V

Drain To Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

400 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

10

6.3

A
A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

40 A

Gate To Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

125 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

AS

520 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

-55 to 150

o

C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

pkg

300
260

o

C

o

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

C

= 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain To Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V (Figure 10) 400 - - V

Gate Threshold Voltage V

GS(TH)VDS

= VGS, ID = 250µA 2.0 - 4.0 V

Zero Gate Voltage Drain Current I

DSS

VDS = Rated BV

DSS

, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BV

DSS

, VGS = 0V, TJ = 150oC - - 250 µA

On-State Drain Current (Note 2) I

D(ON)VDS

> I

D(ON)

x r

DS(ON)MAX

, VGS = 10V 10 - - A

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) r

DS(ON)ID

= 5.2A, VGS = 10V (Figures 8, 9) - 0.4 0.550 Ω

Forward Transconductance (Note 2) g

fs

VDS≥ 50V, ID = 5.2A (Figure 12) 5.8 8 - S

Turn-On Delay Time

d(ON)

VDD = 200V, I

D

≈ 10A, R

G

= 9.1Ω, RL = 19.5Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature

-1721ns

Rise Time t

r

-2741ns

Turn-Off Delay Time t

d(OFF)

-4575ns

Fall Time t

f

-2036ns

Total Gate Charge
(Gate to Source + Gate to Drain)

Q

g(TOT)VGS

= 10V, ID = 10A, VDS = 0.8 x Rated BV

DSS

I

g(REF)

= 1.5mA (Figures 14, 19, 20) Gate Charge is

Essentially Independent of Operating Temperature

-4163nC

Gate to Source Charge Q

gs

-7-nC

Gate to Drain “Miller” Charge Q

gd

-23-nC

Input Capacitance C

ISS

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1250 - pF

Output Capacitance C

OSS

- 300 - pF

Reverse Transfer Capacitance C

RSS

-80-pF

Internal Drain Inductance L

D

Measured between the
Contact Screw on Header
thatisCloser to Sourceand
Gate Pins and Center of
Die

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

- 5.0 - nH

Internal Source Inductance L

S

Measured from the Source
Lead, 6mm (0.25in) from
Header and Source
Bonding Pad

- 12.5 - nH

Thermal Resistance Junction to Case R

θJC

- - 1.0oC/W

Thermal Resistance Junction to Ambient R

θJA

Free Air Operation - - 30oC/W

L

S

L

D

G

D

S

IRF340

3

Source To Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

SD

Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier

- - 10 A

Pulse Source to Drain Current (Note 3) I

SDM

- - 40 A

Drain to Source Diode Voltage (Note 2) V

SD

TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13) - - 2.0 V

Reverse Recovery Time t

rr

TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 170 350 790 ns

Reverse Recovery Charge Q

RR

TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 1.6 4.0 8.2 µC

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 9.2mH, RG = 25Ω, peak IAS = 10A (Figures 15, 16).

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

G

D

S

0 50 100 150

0

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

25 50 75 100 125 150

10

8

6

4

2

0

TC, CASE TEMPERATURE (oC)

I

D

, DRAIN CURRENT (A)

10

-5

10

-4

10

-3

10

-2

0.1 1 10

1

0.1

0.01

10

-3

Z

θJC,

TRANSIENT THERMAL IMPEDANCE

t1, RECTANGULAR PULSE DURATION (s)

0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJC

+ T

C

2

IRF340