Intersil IRF322, IRF321, IRF320 Datasheet

July 1998

Semiconductor

IRF320, IRF321,

IRF322, IRF323

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs

Features

• 2.8A and 3.3A, 350V and 400V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.8Ω and 2.5Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF320 TO-204AA IRF320
IRF321 TO-204AA IRF321
IRF322 TO-204AA IRF322

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17404.

Symbol

D

G

S

IRF323 TO-204AA IRF323

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1569.3

IRF320, IRF321, IRF322, IRF323

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF320 IRF321 IRF322 IRF323 UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

400 350 400 350 V
400 350 400 350 V

3.3

2.1

3.3

2.1

2.8

1.8

2.8

1.8

13 13 11 11 A

±20 ±20 ±20 ±20 V

50 50 50 50 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

Package Body for 10s, See TB334. . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

190 190 190 190 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V, (Figure 10)

IRF320, IRF322 400 - - V

IRF321, IRF323 350 - - V
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

DSS

, VGS = 0V

- - 250 µA

TJ = 125oC

On-State Drain Current (Note 2) I

D(ON)VDS

IRF320, IRF321 3.3 - - A

> I
(Figure 7)

D(ON)

x r

DS(ON)MAX

, VGS = 10V

IRF322, IRF323 2.8 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSS

DS(ON)ID

VGS = ±20V ±100 nA

= 1.8A, VGS = 10V, (Figures 8, 9)

IRF320, IRF321 - 1.5 1.8 Ω

IRF322, IRF323 - 1.8 2.5 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

VDS≥ 10V, ID = 2.0A, (Figure 12) 1.7 2.7 - S

fs

= 200V, ID≈ 3.3A, RG = 18Ω, RL = 60Ω,

-1015ns

VGS = 10V, (Figures 17, 18)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

MOSFET Switching Times are Essentially

r

Independent of Operating Temperature

f

= 10V , ID = 3.3A, VDS = 0.8 x Rated BV

I

= 1.5mA, (Figures 14, 19, 20)

G(REF)

DSS

-1420ns

-3045ns

-1320ns

,

-1220nC

Gate Charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Operating Temperature

gs

gd

-4-nC

-8-nC

5-2

IRF320, IRF321, IRF322, IRF323

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

VDS = 25V, VGS = 0V, f = 1MHz

ISS

(Figure 11)

OSS

RSS

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured from the

S

Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad

θJC

Free Air Operation - - 30

θJA

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 450 - pF

- 100 - pF

-20- pF

- 5.0 - nH

- 12.5 - nH

- - 2.5

o

o

C/W
C/W

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

SDM

Modified MOSFET

SD

Symbol Showing the
Integral Reverse P-N

D

- - 3.3 A

- - 13 A

Junction Diode

G

S

TC = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13) - - 1.8 V

SD

TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 120 270 600 ns

rr

TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 0.64 1.4 3.0 µC

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 31mH, RG = 25Ω, peak IAS = 3.3A. See Figures 15, 16.

5-3