Intersil IRF253, IRF252, IRF251, IRF250 Datasheet

IRF250

Data Sheet March 1999

30A, 200V, 0.085 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is designed, tested and guaranteed to
withstand a specified level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switchingconverters,motordrivers,relaydrivers,anddrivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. They can be operated
directly from integrated circuits.

Formerly developmental type TA09295.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF250 TO-204AE IRF250

NOTE: When ordering, include the entire part number.

File Number

Features

• 30A, 200V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.085Ω

Components to PC Boards”

Symbol

D

G

1825.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AE

GATE (PIN 1)

S

TOP VIEW

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF250

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF250 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

D
DM
GS

D

200 V
200 V

30 A

19 A
120 A
±20 V
150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

910 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 200 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

= 10V 30 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 16A (Figures 8, 9) - 0.07 0.085 Ω
VDS≥ 50V, ID = 16V (Figure 12) 13 19 - S
VDD= 100V, ID≈ 30A, RG = 6.2Ω, RL = 3.2Ω

(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature

-2030ns

- 120 180 ns

- 70 100 ns

- 80 120 ns

= 10V, ID = 30A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figures 14, 19, 20) Gate Charge is

g(REF)

Essentially Independent of Operating Temperature

DSS

,

- 79 120 nC

-13- nC

-42- nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 2000 - pF

- 800 - pF

- 300 - pF

Measured between the
ContactScrew onHeader
that is Closer to Source
and Gate Pins and
Center of Die

Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.83oC/W

Free Air Operation - - 30

o

C/W

2

IRF250

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 1.5mH, RG = 25Ω, peak IAS = 30A. See Figures 15 and 16.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 30 A

- - 120 A

Junction Diode

G

S

TJ = 25oC, ISD= 30A, VGS = 0V (Figure 13) - - 2.0 V

SD

TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs 140 350 630 ns

rr

TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs 1.8 4.7 8.1 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

0.2

0.1

0.1

0.05

0.02

10

, THERMAL IMPEDANCE

θJC

Z

10

0.01

-2

-3

-5

10

SINGLE PULSE

-4

10

10

40

32

24

16

DRAIN CURRENT (A)

D,

I

8

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

, RECTANGULAR PULSE DURATION (S)

t

1

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

t

2

θJC

2

+ T

2

C

NOTES:
DUTY FACTOR: D = t1/t

PEAK T

0.1 1 10

= PDM x Z

J

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

3